An All-Optical Silicon Nano-Transistor

2004 ◽  
Author(s):  
Michal Lipson
Keyword(s):  
All Optical ◽  
Optical Silicon

All-optical silicon microring spiking neuron

2021 ◽  
Author(s):  
Jinlong Xiang ◽  
Yujia Zhang ◽  
yaotian zhao ◽  
Xuhan Guo ◽  
Yikai Su
Keyword(s):  
Spiking Neuron ◽  
All Optical ◽  
Optical Silicon

scholarly journals Photo-Excited Silicon-Based Spatial Terahertz Modulators

2021 ◽  
Vol 14 (1) ◽  
pp. 1-19
Author(s):  
Yu-Lian He ◽  
Yuan-Sheng Wang ◽  
Qi-Ye Wen
Keyword(s):  
High Performance ◽  
Imaging Spectroscopy ◽  
Cost Effective ◽  
Thz Radiation ◽  
All Optical ◽  
Potential Applications ◽  
Modulation Rate ◽  
Silicon Based ◽  
Optical Silicon ◽  
Novel Design

The increasing development of terahertz (THz) technology has led to various potential applications in THz imaging, spectroscopy and communications. These devices capable of actively manipulating the amplitude, phase and frequency of THz waves are thus gaining numerous interests. All-optical silicon-based spatial terahertz modulators (STMs), as a simple, cost-effective, and reconfigurable technique, are standing the focus of research. Beginning with a fundamental concept of THz radiation, this paper systematically summarized the modulation mechanism and theoretical model for this kind of STM, reviewed the recent advancements in THz functional devices implemented by this optical method and yet, discussed the performance-improved measures with an emphasis on the reflection reduction. Despite that, there has been considerable progress in realizing high-performance STMs, and novel design is urgent to realize higher modulation rate and more functionality.

scholarly journals A NOVEL ASYMETRIC STRUCTURE FOR PHOTONIC CRYSTAL BASED ALL OPTICAL SILICON LOGIC OR GATE

2021 ◽  
Vol 95 ◽  
pp. 143-146
Author(s):  
Shahram Hosseinzadeh ◽  
Mohammad Ali Tavakoli ◽  
Nastaran Saeedi
Keyword(s):  
Photonic Crystal ◽  
All Optical ◽  
Optical Silicon ◽  
Or Gate

scholarly journals All-optical silicon simplified passive modulation

2012 ◽  
Vol 7 ◽  
Author(s):  
R. Aharoni ◽  
O. Baharav ◽  
L. Bidani ◽  
M. Sinvani ◽  
D. Elbaz ◽  
...  
Keyword(s):  
All Optical ◽  
Optical Silicon

All-optical silicon-based integrated fiber-optic modulator, logic gate, and self-limiter

1988 ◽  
Vol 66 (10) ◽  
pp. 833-840 ◽  
Author(s):  
R. Normandin ◽  
D. C. Houghton ◽  
M. Simard-Normandin ◽  
Y. Zhang
Keyword(s):  
Fiber Optics ◽  
Logic Gate ◽  
Single Mode ◽  
Bandgap Energy ◽  
Optical Mode ◽  
All Optical ◽  
Recovery Times ◽  
Mode Cutoff ◽  
Silicon Based ◽  
Optical Silicon

We describe an all-optical mode cutoff modulator for use in fiber optics systems working at wavelengths in the 1.3–1.6-μm range. The active waveguide is silicon grown by molecular beam epitaxy, and the channels are fabricated by conventional lithographic techniques and used with standard single-mode fibers. Subnanosecond initiation and recovery times are achieved with less than 150 pJ of control energy in a three-port geometry suitable for use as a logic gate. We also present preliminary results when the guided light is near the bandgap energy and demonstrate self-limiting for integrating Kerr-like self-defocussing nonlinearities. In both cases, the operation of the device is largely wavelength independent and stable.

Correlation analysis of radiation damage

1978 ◽  
Vol 36 (1) ◽  
pp. 214-215
Author(s):  
R. Hegerl ◽  
A. Feltynowski ◽  
B. Grill
Keyword(s):  
Electron Microscopy ◽  
Independent Random Variables ◽  
Optical Parameters ◽  
Bright Field Image ◽  
Bright Field ◽  
Expectation Value ◽  
All Optical ◽  
Image Element ◽  
Stochastic Series ◽  
The Common

Till now correlation functions have been used in electron microscopy for two purposes: a) to find the common origin of two micrographs representing the same object, b) to check the optical parameters e. g. the focus. There is a third possibility of application, if all optical parameters are constant during a series of exposures. In this case all differences between the micrographs can only be caused by different noise distributions and by modifications of the object induced by radiation.Because of the electron noise, a discrete bright field image can be considered as a stochastic series Pm,where i denotes the number of the image and m (m = 1,.., M) the image element. Assuming a stable object, the expectation value of Pm would be Ηm for all images. The electron noise can be introduced by addition of stationary, mutual independent random variables nm with zero expectation and the variance. It is possible to treat the modifications of the object as a noise, too.

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