On-Demand Interactive Simulation-Centered Training for Small Unit Tactics

On-Demand Interactive Simulation-Centered Training: Responsive Technology to Meet Warfighter Training Requirements

10.21236/ada409704 ◽

2002 ◽

Author(s):

Allen Munro ◽

Mark C. Johnson ◽

Quentin A. Pizzini ◽

Josh Walker

Keyword(s):

Interactive Simulation ◽

Training Requirements ◽

On Demand

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Structure Information From Electron Diffraction Intensities

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136180 ◽

1990 ◽

Vol 48 (2) ◽

pp. 516-517

Author(s):

J. Gjønnes ◽

N. Bøe ◽

K. Gjønnes

Keyword(s):

Computational Effort ◽

Unit Cell ◽

Small Unit ◽

Structure Information ◽

Dispersion Surface ◽

Integrated Intensity ◽

The One ◽

Image Position ◽

Convergent Beam ◽

Beam Patterns

Structure information of high precision can be extracted from intentsity details in convergent beam patterns like the one reproduced in Fig 1. From low order reflections for small unit cell crystals,bonding charges, ionicities and atomic parameters can be derived, (Zuo, Spence and O’Keefe, 1988; Zuo, Spence and Høier 1989; Gjønnes, Matsuhata and Taftø, 1989) , but extension to larger unit cell ma seem difficult. The disks must then be reduced in order to avoid overlap calculations will become more complex and intensity features often less distinct Several avenues may be then explored: increased computational effort in order to handle the necessary many-parameter dynamical calculations; use of zone axis intensities at symmetry positions within the CBED disks, as in Figure 2 measurement of integrated intensity across K-line segments. In the last case measurable quantities which are well defined also from a theoretical viewpoint can be related to a two-beam like expression for the intensity profile:With as an effective Fourier potential equated to a gap at the dispersion surface, this intensity can be integrated across the line, with kinematical and dynamical limits proportional to and at low and high thickness respctively (Blackman, 1939).

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Toward quantitative defect analysis using HREM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171304 ◽

1994 ◽

Vol 52 ◽

pp. 714-715

Author(s):

David J. Smith

Keyword(s):

Electron Microscope ◽

Unit Cell ◽

Defect Analysis ◽

Significant Progress ◽

Detailed Characterization ◽

Small Unit ◽

Resolution Electron ◽

High Resolution Electron Microscope ◽

Large Unit Cell ◽

Made In

The electron microscope has evolved to the level where it is now straightforward to record highresolution images from thin samples (t∼10 to 20nm) that are directly interpretable in terms of atomic arrangements. Whilst recorded images necessarily represent two-dimensional projections of the structure, many defects such as dislocations and interfaces may be linear or planar in nature and thus might be expected to be amenable to detailed characterization. In this review, we briefly consider the recent significant progress that has been made in quantitative defect analysis using the high-resolution electron microscope and then discuss some drawbacks to the technique as well as potential scope for further improvements. Surveys of defect modelling for some small-unit-cell materials and interfaces have recently been published, and reference should be made to other papers in this symposium for further examples.The technique of structure imaging originated in the early '70s with observations of large-unit-cell block oxides.

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