Low-Temperature CVD Carbon Nanotubes on Glass Plates for Flat Panel Display Applications

2000 ◽  
Author(s):  
Yonhua Tzeng ◽  
Chao Liu ◽  
Calvin Cutshaw ◽  
Zheng Chen
Keyword(s):  
Carbon Nanotubes ◽  
Low Temperature ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Glass Plates

Field-emission device with carbon nanotubes for a flat panel display

2001 ◽  
Vol 117 (1-3) ◽  
pp. 207-210 ◽  
Author(s):  
Yoshikazu Nakayama ◽  
Seiji Akita
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Emission Device

Characteristics of flat panel display using carbon nanotubes as electron emitters

2000 ◽  
Vol 9 (3-6) ◽  
pp. 1270-1274 ◽  
Author(s):  
J.L. Kwo ◽  
Meiso Yokoyama ◽  
W.C. Wang ◽  
F.Y. Chuang ◽  
I.N. Lin
Keyword(s):  
Carbon Nanotubes ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Electron Emitters

Low Temperature Flat Panel Display Driver Circuits in RTP Crystallized Polysilicon

1999 ◽  
Vol 30 (1) ◽  
pp. 460 ◽  
Author(s):  
Mark Stewart ◽  
Themis Afentakis ◽  
Greg Sarcona ◽  
Miltiadis K. Hatalis
Keyword(s):  
Low Temperature ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Driver

Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications

2002 ◽  
Vol 31 (2) ◽  
pp. 129-135 ◽  
Author(s):  
William J. Lee ◽  
Yean-Kuen Fang ◽  
Jyh-Jier Ho ◽  
Chin-Ying Chen ◽  
Rung-Ywan Tsai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Tin Oxide Films ◽  
Pulsed Magnetron

Low Temperature Poly-Si TFT Technology

2004 ◽  
Vol 814 ◽  
Author(s):  
T. Noguchi ◽  
D.Y. Kim ◽  
J.Y. Kwon ◽  
K.B. Park ◽  
J.S. Jung ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Solid Phase ◽  
Device Fabrication ◽  
Process Temperature ◽  
Plastic Substrate ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Device Structure ◽  
Excimer Laser Annealing

AbstractLow temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600° down to 400°. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200° or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.

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