The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth using Emission Electron Microscopy.

1995 ◽  
Author(s):  
Martin E. Kordesch
Author(s):  
Noboru Takahashi ◽  
Tadami Taoka

The continuous growth of precipitates was very difficult to observe directly by conventional electron microscopy, because of the size effect of a thin film used, With the JEM-1000 kV EM, similar precipitates to those in bulk specimens of Al-Cu alloy were obtained. Thus, films 0.5 μ thick or more have been found thick enough to present a Widmanstätten structure inside the electron microscope.The specimen used was a sheet of Al-4% Cu alloy 0.1 mm thick. It was solution treated at 540°C for 3 hrs, followed by quenching. Dislocations in the specimen were introduced by scratching with a diamond scriber. The region near the scratch was thinned by jet electro-polishing and cut off as a microscope specimen, which was mounted on the heating stage combined with the goniometer. During the whole heating period of more than 2 hrs, the specimen was placed out of the electron beam for the purpose of avoiding radiation damage except at each moment of observation.


1993 ◽  
Vol 311 ◽  
Author(s):  
Robert Sinclair ◽  
Toyohiko J. Konno

ABSTRACTWe have studied the reactions at metal-metalloid interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solidstate amorphization. For non-reactive systems, crystallization of the metalloid is often achieved with nucleation and growth mediated by the metal phase.


2005 ◽  
Vol 494 ◽  
pp. 7-12
Author(s):  
R. Sinclair ◽  
Kyung Hoon Min ◽  
U. Kwon

A review is given of the application of in situ transmission electron microscopy to study various processes associated with the crystallization of amorphous thin films. Solid phase epitaxial regrowth of ion-implanted silicon is compared with nucleation and growth in deposited thin films. The mechanism of metal-mediated crystallization is deduced directly from high resolution recordings, and the kinetics of tantalum oxide devitrefication are obtained. The advantages of direct in situ observation are described


Author(s):  
R-R. Lee

Partially-stabilized ZrO2 (PSZ) ceramics have considerable potential for advanced structural applications because of their high strength and toughness. These properties derive from small tetragonal ZrO2 (t-ZrO2) precipitates in a cubic (c) ZrO2 matrix, which transform martensitically to monoclinic (m) symmetry under applied stresses. The kinetics of the martensitic transformation is believed to be nucleation controlled and the nucleation is always stress induced. In situ observation of the martensitic transformation using transmission electron microscopy provides considerable information about the nucleation and growth aspects of the transformation.


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