High Power Switch Design.

1995 ◽  
Author(s):  
David V. Turnquist ◽  
Brian W. Wegner
Keyword(s):  
High Power ◽  
Power Switch ◽  
Switch Design

A modular shadow-gridded high power switch tube

1987 ◽  
Author(s):  
R.B. True ◽  
R.J. Hansen ◽  
H.J. Hjelm ◽  
L.S. Mandolfo
Keyword(s):  
High Power ◽  
Power Switch

Design and simulation of a smart optically controlled high-power switch based on a Si/SiC hybrid device structure

2001 ◽  
Author(s):  
Prashant Bhadri ◽  
Deepti Sukumaran ◽  
Samhita Dasgupta ◽  
Fred R. Beyette, Jr.
Keyword(s):  
High Power ◽  
Device Structure ◽  
Hybrid Device ◽  
Power Switch

A Millimeter-Wave Low-Loss and High-Power Switch MMIC using Multiple FET Resonators

2006 ◽  
Author(s):  
Masatake Hangai ◽  
Tamotsu Nishino ◽  
Kenichi Miyaguchi ◽  
Morishige Hieda ◽  
Kunihiro Endo ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Power ◽  
Low Loss ◽  
Power Switch

Optically Triggered Power Switch Based on 4H-SiC Vertical JFET

2011 ◽  
Vol 679-680 ◽  
pp. 625-628
Author(s):  
Petre Alexandrov ◽  
Xue Qing Li ◽  
Jian Hui Zhao
Keyword(s):  
Light Source ◽  
High Power ◽  
System Performance ◽  
Low Voltage ◽  
Proper Choice ◽  
Limiting Factors ◽  
Switching Frequency ◽  
Power Switching ◽  
System Parameters ◽  
Power Switch

An optically controlled power switch based on 4H-SiC Trenched and Implanted Vertical JFETs (TIVJFET) was developed that comprises three parts: an LED light-source driver, light-triggered integrated gate buffer driver, and vertical high power normally-off switch. The light-triggered integrated gate buffer driver includes a photodiode and four stages of low voltage 4H-SiC TIVJFETs, which are hybrid integrated. Optically gated power switching was experimentally demonstrated with a maximum switching frequency of about 50 kHz, the system performance limiting factors were clearly identified and experimentally confirmed, and ways to substantially increase the switching frequency were shown. From calculations, based on realistically possible system parameters values, it could be seen that a maximum switching frequency around 1 MHz is theoretically possible with a proper choice of light source, detector, and buffer transistor parameters.

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