An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2

1991 ◽  
Author(s):  
V. A. Yakovlev ◽  
E. A. Irene
Keyword(s):  
Spectroscopic Ellipsometry

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

scholarly journals Optical Characterization of Ultra-Thin Films of Azo-Dye-Doped Polymers Using Ellipsometry and Surface Plasmon Resonance Spectroscopy

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 41
Author(s):  
Najat Andam ◽  
Siham Refki ◽  
Hidekazu Ishitobi ◽  
Yasushi Inouye ◽  
Zouheir Sekkat
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Spectroscopic Ellipsometry ◽  
Plasmon Resonance ◽  
Complex Refractive Index ◽  
Resonance Spectroscopy ◽  
Doped Polymers

The determination of optical constants (i.e., real and imaginary parts of the complex refractive index (nc) and thickness (d)) of ultrathin films is often required in photonics. It may be done by using, for example, surface plasmon resonance (SPR) spectroscopy combined with either profilometry or atomic force microscopy (AFM). SPR yields the optical thickness (i.e., the product of nc and d) of the film, while profilometry and AFM yield its thickness, thereby allowing for the separate determination of nc and d. In this paper, we use SPR and profilometry to determine the complex refractive index of very thin (i.e., 58 nm) films of dye-doped polymers at different dye/polymer concentrations (a feature which constitutes the originality of this work), and we compare the SPR results with those obtained by using spectroscopic ellipsometry measurements performed on the same samples. To determine the optical properties of our film samples by ellipsometry, we used, for the theoretical fits to experimental data, Bruggeman’s effective medium model for the dye/polymer, assumed as a composite material, and the Lorentz model for dye absorption. We found an excellent agreement between the results obtained by SPR and ellipsometry, confirming that SPR is appropriate for measuring the optical properties of very thin coatings at a single light frequency, given that it is simpler in operation and data analysis than spectroscopic ellipsometry.

Analysis of thickness-dependent electron transport in magnetron sputtered ZrN films by spectroscopic ellipsometry

2021 ◽  
pp. 138746
Author(s):  
Jiří Bulíř ◽  
Joris More-Chevalier ◽  
Sergii Chertopalov ◽  
Ladislav Fekete ◽  
Lenka Volfová ◽  
...  
Keyword(s):  
Electron Transport ◽  
Spectroscopic Ellipsometry
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