Semiconductor Technology (Table of Contents)

1990 ◽  
Author(s):  
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSONAFB OH
Keyword(s):  
Semiconductor Technology

Radical-beam gettering epitaxy - a new technique in III-V group semiconductor technology

2001 ◽  
Vol 10 (0) ◽  
pp. 217-220
Author(s):  
М. Б. Котляревский ◽  
В. В. Кидалов ◽  
А. С. Ревенко
Keyword(s):  
New Technique ◽  
Semiconductor Technology ◽  
A New Technique

Application of AFP Nanoprobing Light-Induced Photovoltaic Current in the Failure Analysis

2017 ◽  
Author(s):  
C.Q. Chen ◽  
P.T. Ng ◽  
G.B. Ang ◽  
Francis Rivai ◽  
S.L. Ting ◽  
...  
Keyword(s):  
Image Analysis ◽  
Failure Analysis ◽  
Photovoltaic Effect ◽  
Electrical Characterization ◽  
Fault Isolation ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Current Image ◽  
Scaling Down ◽  
Detailed Circuit

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

Metal Bridge Defects Localization by a Tiny Leakage between One of Bridged Signals and VDD (GND)

2014 ◽  
Author(s):  
Chunlei Wu ◽  
Suying Yao
Keyword(s):  
Circuit Model ◽  
Functional Modules ◽  
Semiconductor Technology ◽  
Simple Circuit ◽  
Lock In

Abstract As semiconductor technology continues to advance to smaller dimensions and more complex circuit designs, it is becoming more challenging to locate the resistive short directly between two metal lines (signals) due to a metal bridge defect. Especially these two metal lines are very long and relevant to many functional modules. After studying the failed circuit model, we found there should be a tiny leakage between one of the bridged signals and one of common power signals (such as VDD and GND) on a failed IC compared with the reference one, if there is a metal bridge defect between these two bridged signals. The tiny leakage between one of the bridged signals and one of power signals is an indirect leakage that is a mapping of the direct resistive short between these two bridged signals. The metal bridge defect could be pinpointed with the tiny leakage between one of the bridged signals and one of power signals by Lock-in IR-OBIRCH. It is an easier and faster way to locate the metal bridge defects. In this paper, the basic and simple circuit model with a metal bridge defect will be presented and two cases will be studied to demonstrate how to localize a metal bridge defect by the tiny leakage between one of the bridged signals and one of power signals.

scholarly journals Atomic-scale structure and chemical sensing application of ultrasmall size-selected Pt nanoparticles supported on SnO2

2020 ◽  
Vol 1 (9) ◽  
pp. 3200-3207
Author(s):  
Stephan Steinhauer ◽  
Eva Lackner ◽  
Florentyna Sosada-Ludwikowska ◽  
Vidyadhar Singh ◽  
Johanna Krainer ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Chemical Sensing ◽  
Pt Nanoparticles ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Atomic Scale ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Sensing Application ◽  
Chemoresistive Sensors

SnO2-based chemoresistive sensors integrated in complementary metal-oxide-semiconductor technology were functionalized with ultrasmall Pt nanoparticles, resulting in carbon monoxide sensing properties with minimized humidity interference.

A 60 GHz reconfigurable active phase shifter based on a vector modulator in 65 nm CMOS technology

2016 ◽  
Vol 8 (3) ◽  
pp. 399-404 ◽  
Author(s):  
Boris Moret ◽  
Nathalie Deltimple ◽  
Eric Kerhervé ◽  
Baudouin Martineau ◽  
Didier Belot
Keyword(s):  
Phase Shift ◽  
Phase Shifter ◽  
Complementary Metal Oxide Semiconductor ◽  
Active Phase ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
60 Ghz ◽  
Semiconductor Technology ◽  
Vector Modulator ◽  
Active Phase Shifter

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

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