Special Techniques for the Auger Analysis of Microelectronic Devices.

1986 ◽  
Author(s):  
M. S. Leung ◽  
G. W. Stupian
Keyword(s):  
Auger Analysis ◽  
Microelectronic Devices

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Non-Visible Defect Analysis of OTP Device

2011 ◽  
Author(s):  
C.Q. Chen ◽  
G.B. Ang ◽  
Z.X. Xing ◽  
Y.N. Hua ◽  
Z.Q. Mo ◽  
...  
Keyword(s):  
Trap Center ◽  
Data Retention ◽  
Auger Analysis ◽  
Cross Sectional ◽  
Critical Dimensions ◽  
Charge Trap ◽  
Root Cause ◽  
Transmission Electron ◽  
Electrical Analysis ◽  
Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

Layout Overlay Techniques to Improve Failure Analysis

1998 ◽  
Author(s):  
Christian Burmer ◽  
Siegfried Görlich ◽  
Siegfried Pauthner
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
New Technologies ◽  
Ion Beam ◽  
Image Correlation ◽  
Microelectronic Devices ◽  
Overlay Technique ◽  
Correlation Techniques ◽  
Navigation Software ◽  
Image Format

Abstract New layout overlay technique has been developed based on standard image correlation techniques to support failure analysis in modern microelectronic devices, which are critical to analyze because they are realized in new technologies using sub-ìm design rules, chemical mechanical polishing techniques (CMP) and autorouted design techniques. As the new technique is realized as an extension of a standard CAD-navigation software and as it makes use of standard image format "TIFF" for data input, which is available at all modern equipments for failure analysis, these technique can be applied to all modern failure analysis methods. Here examples are given for three areas of application: circuit modification using Focused Ion Beam (FIB), support of preparation for backside inspection and fault localization using emission microscopy.

The Investigation of Fluorine Induced Novel Probe Marker Discoloration

2018 ◽  
Author(s):  
W.F. Hsieh ◽  
Henry Lin ◽  
Vincent Chen ◽  
Irene Ou ◽  
Y.S. Lou
Keyword(s):  
Electric Field ◽  
Dark Field ◽  
Inspection System ◽  
Automated Inspection ◽  
Stress Tests ◽  
Auger Analysis ◽  
Corrosion Film ◽  
Scan Data ◽  
Thickness Variations ◽  
One Year

Abstract This paper describes the investigation of donut-shaped probe marker discolorations found on Al bondpads. Based on SEM/EDS, TEM/EELS, and Auger analysis, the corrosion product is a combination of aluminum, fluorine, and oxygen, implying that the discolorations are due to the presence of fluorine. Highly accelerated stress tests simulating one year of storage in air resulted in no new or worsening discolorations in the affected chips. In order to identify the exact cause of the fluorine-induced corrosion, the authors developed an automated inspection system that scans an entire wafer, recording and quantifying image contrast and brightness variations associated with discolorations. Dark field TEM images reveal thickness variations of up to 5 nm in the corrosion film, and EELS line scan data show the corresponding compositional distributions. The findings indicate that fluorine-containing gases used in upstream processes leave residues behind that are driven in to the Al bondpads by probe-tip forces and activated by the electric field generated during CP testing. The knowledge acquired has proven helpful in managing the problem.

Studies and Application of Auger Monitoring System for Quality Control and Assurance of Al Bondpads

2016 ◽  
Author(s):  
Hua Younan
Keyword(s):  
Quality Control ◽  
Sample Preparation ◽  
Monitoring System ◽  
Failure Mechanisms ◽  
Wafer Fabrication ◽  
Contamination Level ◽  
Auger Analysis ◽  
Low Level ◽  
Monitoring Frequency ◽  
Control Procedures

Abstract In wafer fabrication (Fab), Fluorine (F) based gases are used for Al bondpad opening process. Thus, even on a regular Al bondpad, there exists a low level of F contamination. However, the F level has to be controlled at a lower level. If the F level is higher than the control/spec limits, it could cause F-induced corrosion and Al-F defects, resulting in pad discoloration and NSOP problems. In our previous studies [1-5], the theories, characteristics, chemical and physical failure mechanisms and the root causes of the F-induced corrosion and Al-F defects on Al bondpads have been studied. In this paper, we further study F-induced corrosion and propose to establish an Auger monitoring system so as to monitor the F contamination level on Al bondpads in wafer fabrication. Auger monitoring frequency, sample preparation, wafer life, Auger analysis points, control/spec limits and OOC/OOS quality control procedures are also discussed.

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