The Evolution and Practical Applications of Failure Modes and Effects Analyses

1983 ◽  
Author(s):  
Heather B. Dussault
Keyword(s):  
Failure Modes ◽  
Practical Applications

A Comparison of Two Wave Models and Their Influence on Fatigue Damage in Ship Structures

2013 ◽  
Author(s):  
Wengang Mao ◽  
Fredhi Agung Prasetyo ◽  
Jonas W. Ringsberg ◽  
Naoki Osawa
Keyword(s):  
Fatigue Damage ◽  
Failure Modes ◽  
Maritime Industry ◽  
Ship Structures ◽  
Fatigue Assessment ◽  
Practical Applications ◽  
The North ◽  
Fatigue Design ◽  
Wave Models ◽  
Different Sources

In the maritime industry, fatigue failure is one of the most significant failure modes for ship structures. The fatigue damage in ship structures is mainly caused by the variation of wave loadings applied on ships, leading to variable structural stresses. Therefore, a reliable description of wave environments encountered during a ship’s service life is essential for accurate fatigue assessment of ship structures. Besides the wave scatter diagram provided by classification society rules, different statistical wave models have also been built up to model wave environments along arbitrary ship routes. The wave models could provide more specific wave environment for any chosen sailing routes of an individual ship. They may have the potential to be used for some practical applications, such as conceptual ship fatigue design, remaining fatigue life prediction when a ship plans to change its original trade region, and crack maintenance planning etc. Since the development of these models may be based on different sources, e.g. satellite measurements, hindcast data, buoys, etc., the reliability and consistence of wave generations from various wave models must be validated by the measured wave environments in order to be used for those practical applications. In this paper, waves generated from two different wave models, one based on hindcast data and one mainly on satellite data, are compared with measured wave environments encountered by a 2800 TEU container vessel on the North Atlantic route. These wave models are used in the calculation of the fatigue damage in the vessel. The results obtained using waves generated from the two wave models are compared with the fatigue damage calculated based on strain measurements in the ship. Recommendations for future development of the wave models and further investigation to make the applications more realistic for ship fatigue assessment are also presented.

scholarly journals Analysis of Failure-Mode Dependent Joint Strength in Hole Clinching from the Aspects of Geometrical Interlocking Parameters

Metals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1020 ◽  
Author(s):  
Chan-Joo Lee ◽  
Guo Shen ◽  
Byung-Min Kim ◽  
Francesco Lambiase ◽  
Dae-Cheol Ko
Keyword(s):  
Failure Mode ◽  
Joint Strength ◽  
Analytical Approach ◽  
Failure Modes ◽  
Failure Process ◽  
Dissimilar Materials ◽  
Maximum Error ◽  
Element Analysis ◽  
Practical Applications ◽  
Mechanical Methods

The hole-clinching process is one of the mechanical methods for joining dissimilar materials, such as aluminum alloy with advanced high-strength steel, hot-pressed steel, and carbon fiber reinforced plastics, employing forming technology-based methods. In joint design, the analysis of the failure-mode dependent joint strength is a crucial step in achieving structural performance for practical applications. In this study, the influence of the geometrical interlocking parameters on the failure-mode dependent joint strength was investigated in order to design the geometrical interlocking shape of the hole-clinched joint to achieve a target joint strength. Moreover, the failure process of the hole-clinched joint under pullout loading condition was studied to determine the geometrical interlocking parameters that affect joint strength. Based on the results of the finite element analysis, an analytical approach for the failure-mode dependent joint strength was proposed to predict the strength of the hole-clinched joint. In addition, the proposed analytical approach was applied to the hole-clinching process with dissimilar materials. Its effectiveness was then verified using the cross-tension test. Accordingly, it was found that it was possible to predict the failure modes and joint strength with a maximum error of 7.8%.

scholarly journals Comparison of the Fold and Cusp Catastrophe Models for Tensile Cracking and Sliding Rockburst

2021 ◽  
Vol 2021 ◽  
pp. 1-10
Author(s):  
Xinjiang Wei ◽  
Xiao Wang ◽  
Taotao Chen ◽  
Zhi Ding ◽  
Xi Wu
Keyword(s):  
Critical Loads ◽  
Failure Modes ◽  
System Stability ◽  
Cusp Catastrophe ◽  
Practical Applications ◽  
Catastrophe Model ◽  
Cusp Catastrophe Model ◽  
The Stability ◽  
Catastrophe Models ◽  
Fold Catastrophe

The failure modes of rockburst in catastrophe theory play an essential role in both theoretical analysis and practical applications. The tensile cracking and sliding rockburst is studied by analyzing the stability of the simplified mechanical model based on the fold catastrophe model. Moreover, the theory of mechanical system stability, together with an engineering example, is introduced to verify the analysis accuracy. Additionally, the results of the fold catastrophe model are compared with that of the cusp catastrophe model, and the applicability of two catastrophe models is discussed. The results show that the analytical results of the fold catastrophe model are consistent with the solutions of the mechanical systems stability theory. Moreover, the critical loads calculated by two catastrophe models are both less than the sliding force, which conforms to the actual situations. Nevertheless, the critical loads calculated from the cusp catastrophe model are bigger than those obtained by the fold catastrophe model. In conclusion, a reasonable result of the critical load can be obtained by the fold catastrophe model rather than the cusp catastrophe model. Moreover, the fold catastrophe model has a much wider application. However, when the potential function of the system is a high-order function of the state variable, the fold catastrophe model can only be used to analyze local parts of the system, and using a more complex catastrophe model such as the cusp catastrophe model is recommended.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

1250-kilovolt scanning transmission electron microscope

1984 ◽  
Vol 42 ◽  
pp. 624-625
Author(s):  
T. Imura ◽  
S. Maruse ◽  
K. Mihama ◽  
M. Iseki ◽  
M. Hibino ◽  
...  
Keyword(s):  
High Voltage ◽  
Electron Probe ◽  
Scanning Transmission Electron Microscope ◽  
Pressure Vessels ◽  
Practical Applications ◽  
Voltage Generator ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
New Applications ◽  
High Voltage Generator

Ultra high voltage STEM has many inherent technical advantages over CTEM. These advantages include better signal detectability and signal processing capability. It is hoped that it will explore some new applications which were previously not possible. Conventional STEM (including CTEM with STEM attachment), however, has been unable to provide these inherent advantages due to insufficient performance and engineering problems. Recently we have developed a new 1250 kV STEM and completed installation at Nagoya University in Japan. It has been designed to break through conventional engineering limitations and bring about theoretical advantage in practical applications.In the design of this instrument, we exercised maximum care in providing a stable electron probe. A high voltage generator and an accelerator are housed in two separate pressure vessels and they are connected with a high voltage resistor cable.(Fig. 1) This design minimized induction generated from the high voltage generator, which is a high frequency Cockcroft-Walton type, being transmitted to the electron probe.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Resolution and measurement in the scanning electron microscope

1987 ◽  
Vol 45 ◽  
pp. 534-537 ◽  
Author(s):  
Michael T. Postek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Engineering Design ◽  
Resolving Power ◽  
Practical Applications ◽  
Instrument Resolution ◽  
Accurate Definition ◽  
Definition Of ◽  
Scanning Electron ◽  
Better Than

The term ultimate resolution or resolving power is the very best performance that can be obtained from a scanning electron microscope (SEM) given the optimum instrumental conditions and sample. However, as it relates to SEM users, the conventional definitions of this figure are ambiguous. The numbers quoted for the resolution of an instrument are not only theoretically derived, but are also verified through the direct measurement of images on micrographs. However, the samples commonly used for this purpose are specifically optimized for the measurement of instrument resolution and are most often not typical of the sample used in practical applications.SEM RESOLUTION. Some instruments resolve better than others either due to engineering design or other reasons. There is no definitively accurate definition of how to quantify instrument resolution and its measurement in the SEM.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

A New Detector System For The HB5 Stem Instrument

1985 ◽  
Vol 43 ◽  
pp. 134-135
Author(s):  
J.M. Cowley
Keyword(s):  
Dark Field ◽  
Detector System ◽  
Electron Holography ◽  
Small Specimen ◽  
Bright Field ◽  
Multiple Images ◽  
Practical Applications ◽  
Wide Range ◽  
Diffraction Patterns ◽  
Operational Modes

The HB5 STEM instrument at ASU has been modified previously to include an efficient two-dimensional detector incorporating an optical analyser device and also a digital system for the recording of multiple images. The detector system was built to explore a wide range of possibilities including in-line electron holography, the observation and recording of diffraction patterns from very small specimen regions (having diameters as small as 3Å) and the formation of both bright field and dark field images by detection of various portions of the diffraction pattern. Experience in the use of this system has shown that sane of its capabilities are unique and valuable. For other purposes it appears that, while the principles of the operational modes may be verified, the practical applications are limited by the details of the initial design.

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