Analysis of Laser-Enhanced Adsorption/Desorption Processes on Semiconductor Surfaces via Electronic Surface State Excitation.

1982 ◽  
Author(s):  
William C. Murphy ◽  
A. C. Beri ◽  
Thomas F. George ◽  
Jui-Teng Lin
Keyword(s):  
Surface State ◽  
Semiconductor Surfaces ◽  
Electronic Surface State ◽  
Enhanced Adsorption ◽  
Adsorption Desorption ◽  
Electronic Surface

Electronic surface state of TiO2 electrode doped with transition metals, studied with cluster model and DV-Xα method

2004 ◽  
Vol 30 (3-4) ◽  
pp. 383-388 ◽  
Author(s):  
Dong Yoon Lee ◽  
Won Jae Lee ◽  
Jae Sung Song ◽  
Jung Hyuk Koh ◽  
Yang Soo Kim
Keyword(s):  
Transition Metals ◽  
Surface State ◽  
Cluster Model ◽  
Tio2 Electrode ◽  
Electronic Surface State ◽  
Electronic Surface

Electronic surface state of NiO (100)

1993 ◽  
Vol 210 (1-3) ◽  
pp. 10-14 ◽  
Author(s):  
A. Freitag ◽  
V. Staemmler ◽  
D. Cappus ◽  
C.A. Ventrice ◽  
K. Al Shamery ◽  
...  
Keyword(s):  
Surface State ◽  
Electronic Surface State ◽  
Electronic Surface

Analysis of Laser-Enhanced Adsorption/Desorption Processes on Semiconductor Surfaces via Electronic Surface State Excitation

1982 ◽  
Vol 17 ◽  
Author(s):  
William C. Murphy ◽  
A. C. Beri ◽  
Thomas F. George ◽  
Jui-Teng Lin
Keyword(s):  
Laser Radiation ◽  
Energy Gap ◽  
Surface States ◽  
Surface Region ◽  
Direct Excitation ◽  
Enhanced Adsorption ◽  
A Charge ◽  
Selective Enhancement ◽  
Adsorption Desorption ◽  
Electronic Surface

ABSTRACTElectronic surface states in semiconductors often lie between the valence and conduction bands and give rise to charge densities confined to the surface region. Laser radiation of frequency less than the energy gap can excite electrons from delocalized valence band states to these localized surface states leading to large changes in the charge distribution at the surface. Selective enhancement of adsorption/desorption processes involving ionic or polar adspecies can result from such a charge redistribution. Using a onedimensional model for silicon, the cross-section for the laser-induced electronic transition to surface states is shown to be large. The interaction energy of an adspecies with the surface changes significantly with direct excitation of surface states in a semiconductor. For a one-dimensional metal, however, direct transitions between bulk and surface states are not allowed, but phonon-mediated transitions coupled with laser radiation lead to substantial charge transfer as for semiconductors.

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