Application and Performance of Single-Trip, Multi-zone, High-Rate Water Packs in a Mature Low-Pressure, Low-Temperature Gas Field

2004 ◽  
Author(s):  
Lewis B. Ledlow ◽  
Brian T. Seitz
Keyword(s):  
Low Temperature ◽  
Low Pressure ◽  
High Rate ◽  
Gas Field ◽  
And Performance

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

Rapid Freezing of Freeze-Etch Specimens

1980 ◽  
Vol 38 ◽  
pp. 752-755
Author(s):  
A. Elgsaeter ◽  
T. Espevik ◽  
G. Kopstad
Keyword(s):  
Low Temperature ◽  
Metal Surface ◽  
Relative Velocity ◽  
Thermal Contact ◽  
High Rate ◽  
Rapid Freezing ◽  
Temperature Decrease ◽  
Freeze Etching

The importance of a high rate of temperature decrease (“rapid freezing”) when freezing specimens for freeze-etching has long been recognized1. The two basic methods for achieving rapid freezing are: 1) dropping the specimen onto a metal surface at low temperature, 2) bringing the specimen instantaneously into thermal contact with a liquid at low temperature and subsequently maintaining a high relative velocity between the liquid and the specimen. Over the last couple of years the first method has received strong renewed interest, particularily as the result of a series of important studies by Heuser and coworkers 2,3. In this paper we will compare these two freezing methods theoretically and experimentally.

CHEMISORPTION OF CO AND METHANATION ON Rh SURFACES AT LOW TEMPERATURE AND LOW PRESSURE, AN ATOM-PROBE FIM STUDY

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-487-C6-492
Author(s):  
W. Liu ◽  
D. M. Ren ◽  
C. L. Bao ◽  
T. T. Tsong
Keyword(s):  
Low Temperature ◽  
Atom Probe ◽  
Low Pressure

Upgrading Wastewater Treatment Plants with Anaerobic Selectors

1990 ◽  
Vol 22 (7-8) ◽  
pp. 35-43
Author(s):  
K. D. Tracy ◽  
S. N. Hong
Keyword(s):  
Phosphorus Removal ◽  
Wastewater Treatment Plants ◽  
Full Scale ◽  
High Rate ◽  
Nitrogen Control ◽  
Biological Phosphorus Removal ◽  
Conventional Activated Sludge ◽  
And Performance ◽  
Activated Sludge Processes ◽  
Biological Phosphorus

The anaerobic selector of the A/0™ process offers many advantages over conventional activated sludge processes with respect to process performance and operational stability. This high-rate, single-sludge process has been successfully demonstrated in full-scale operations for biological phosphorus removal and total nitrogen control in addition to BOD and TSS removal. This process can be easily utilized in upgrading existing treatment plants to meet stringent discharge limitations and to provide capacity expansion. Upgrades of two full-scale installations are described and performance data from the two facilities are presented.

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical
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