Probability Approach to Casing Design Using Monte Carlo Simulation

2020 ◽  
Author(s):  
Amalachukwu Muoghalu ◽  
John Ansa ◽  
Adewale Dosunmu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Probability Approach

scholarly journals A Monte Carlo simulation to validate the EAR cut-point method for assessing the prevalence of nutrient inadequacy at the population level

2004 ◽  
Vol 7 (7) ◽  
pp. 893-900 ◽  
Author(s):  
B de Lauzon ◽  
JL Volatier ◽  
A Martin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Population Level ◽  
Point Method ◽  
Probabilistic Methods ◽  
Recommended Dietary Allowance ◽  
The Real ◽  
Cut Point ◽  
Probability Approach ◽  
Dietary Allowance

AbstractObjective:The aim of this study was to validate the EAR cut-point method for assessing the prevalence of nutrient inadequacy at the population level.Design and subjects:Different methods for estimating the prevalence of inadequate intake were compared: the cut-off point method, with cut-off points at the Recommended Dietary Allowance (RDA), 0.66 RDA, 0.50 RDA and the Estimated Average Requirement (EAR); the probability approach; and a Monte Carlo simulation. In total, 591 men and 674 women, aged 20–55 years, were included in the analyses.Results:The prevalence of inadequate intake as estimated by the EAR cut-point method was similar to the prevalence of inadequacy estimated by both probabilistic methods. The cut-point method with RDA, 0.66 RDA and 0.50 RDA as cut-off limits induced an over- or an underestimation of the real prevalence of inadequacy.Conclusions:Probabilistic methods consider both the intake variability and the requirement variability, and, as a result, their estimation should be closer to the real prevalence of inadequacy. The use of the EAR cut-point method yields a good estimation of the prevalence of inadequate intake, comparable to the probability approach, and limits over- and underestimation of the prevalence induced by other cut-off points.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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