A Comparative Study on the Performance of Acid Systems for High Temperature Matrix Stimulation

2016 ◽  
Author(s):  
A. Ameri ◽  
H. M. Nick ◽  
N. Ilangovan ◽  
A. Peksa
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Temperature Matrix

Comparative Study of GaN Growth Process by MOVPE

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Gas Phase ◽  
Residence Time ◽  
Gas Flow ◽  
Flow Sheet ◽  
Flow Zone ◽  
High Quality ◽  
Phase Temperature ◽  
High Temperature Gas

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Comparative study on the high-temperature oxidation resistance of porous and solid TiNi-based alloys

2021 ◽  
Author(s):  
Ekaterina Marchenko ◽  
Gulsharat Baigonakova ◽  
Kirill Dubovikov ◽  
Yuri Yasenchuk ◽  
Timofey Chekalkin ◽  
...  
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Oxidation Resistance ◽  
High Temperature Oxidation ◽  
Temperature Oxidation

The comparative study of irreversibility effects in Nb foil and high-temperature superconducting ceramics by μSR

1991 ◽  
Vol 63 (1-4) ◽  
pp. 123-130 ◽  
Author(s):  
V. G. Grebinnik ◽  
V. N. Duginov ◽  
V. A. Zhukov ◽  
S. Kapusta ◽  
A. B. Lazarev ◽  
...  
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
High Temperature Superconducting ◽  
Superconducting Ceramics ◽  
The Comparative Study

Comparative Study of Energy Harvesting from High Temperature Piezoelectric Single Crystals

2009 ◽  
Vol 48 (9) ◽  
pp. 091406 ◽  
Author(s):  
Vishwas Bedekar ◽  
Josiah Oliver ◽  
Shujun Zhang ◽  
Shashank Priya
Keyword(s):  
High Temperature ◽  
Energy Harvesting ◽  
Comparative Study ◽  
Single Crystals

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

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