Resistivity Logging in Conductive-Mud Environment and High Resistivity Formations. Dual Laterolog or Propagation LWD Tool?

2015 ◽  
Author(s):  
L. A. Lander ◽  
A. Silva ◽  
C. Simon
Keyword(s):  
High Resistivity ◽  
Resistivity Logging ◽  
Dual Laterolog

scholarly journals RELATIONSHIP BETWEEN BIOGAS PRODUCTION AND VARIATIONS IN ELECTRIC RESISTIVITY IN LANDFILL OF RIO CLARO CITY, BRAZIL

2015 ◽  
Vol 33 (2) ◽  
Author(s):  
César Augusto Moreira ◽  
Marcus Cesar Avezum Alves De Castro ◽  
Leonardo Paioli Carrazza ◽  
Fernanda Cavallari ◽  
Lívia Portes Innocente Helene ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Organic Matter ◽  
Seasonal Variation ◽  
Biogas Production ◽  
Gas Production ◽  
Electric Resistivity ◽  
High Resistivity ◽  
Dc Resistivity ◽  
Geophysical Logging ◽  
Resistivity Logging

ABSTRACT. This work relates measures of the biogas flow in drains located on landfill with measurements of electric resistivity, obtained by the technique of geophysical logging by measuring cable installed in two vertical boreholes near to two biogas drains, with different flows. The results indicate that variation in rainfall, generation and accumulation of biogas in landfill, are repairable correlation with oscillations in electrical resistivity measures. The biogas production is apparently conditioned by age of residues and organic matter available from the degradation. The biogas drain in region with low production of biogas does not present resistivity pattern directly or indirectly correlated to biogas production, while the biogas drain in region with high gas production was characterized by high resistivity values, with seasonal variation by influence of rainfall.Keywords: methane, organic matter, rainfall, DC resistivity, logging. RESUMO. Este trabalho relaciona medidas da vazão de biogás, em drenos localizados em aterro sanitário, com medidas de resistividade elétrica, obtida pela técnica de perfilagem geofísica por meio de cabos instalados próximos a dois drenos de biogás com diferentes vazões. Os resultados indicaram que variações de pluviosidade, geracão e acumulação de biogás no aterro são passíveis de correlação com oscilações em medidas de resistividade elétrica. A produção de biogás é aparentemente condicionada à idade dos resíduos e à disponibilidade de matéria orgânica passível de degradação. O dreno de baixa vazão não apresentou um padrão de resistividade direta ou indiretamente correlacionável com a produção de biogás. A região do dreno de alta vazão foi caracterizada por alta resistividade, com variações sazonais por influencia de chuvas.Palavras-chave: metano, matéria orgânica, chuva, eletrorresistividade, perfilagem.

Using Resistivity Data to Study the Waterflooding Process: A Case Study in Tight Sandstone Reservoirs of Ordos Basin, China

Geophysics ◽  
2020 ◽  
pp. 1-65
Author(s):  
Zhihao Jiang ◽  
Jinhua Fu ◽  
Gaoren Li ◽  
Zhiqiang Mao ◽  
Peiqiang Zhao
Keyword(s):  
Fresh Water ◽  
Oil Recovery ◽  
Ordos Basin ◽  
Water Injection ◽  
High Resistivity ◽  
Formation Water ◽  
Tight Sandstone ◽  
Oil Saturation ◽  
Water Cut ◽  
Resistivity Logging

Water injection is one of the most common methods used to enhance the oil recovery of reservoirs with low permeability and strong heterogeneity. However, with the injection of water in the production process, the formation water salinity, oil saturation, and the distribution of the residual oil in the reservoir are altered, causing difficulties in the evaluation of the flooded layers. Consequently, it is crucial to understand the changes in reservoir resistivity when evaluating waterflooded layers with different wettabilities. Resistivity experiments for high resistivity (HR) and normal resistivity (NR) tight sandstone samples were carried out to simulate different types of waterflooding processes. Specifically, fresh water and the original formation water with higher salinity were separately used to displace oil in rock samples, including both the HR and NR samples. The results show that both the salinity of injected water and the reservoir wettability can affect the reservoir resistivity after waterflooding. When fresh water is injected, the resistivity of both NR and HR samples initially decreases, and then increases due to reduced oil saturation and increased salinity of the injected fresh water. In contrast, the resistivity of both NR and HR samples decreases monotonically when the original formation water is injected. The study also shows formation water injection facilitates resistivity logging evaluation of high-resistance waterflooding layers than fresh water injection. To our knowledge, this is the first report of such a rich set of resistivity experiments in tight sandstone waterflooding reservoirs with complex wettability. Finally, combining waterflooding resistivity experiments with relative permeability, a new fast and convenient method for evaluating the extent of waterflooding of a tight sandstone reservoir is proposed, which has been successfully applied to field-data examples for water-cut evaluation.

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon

Pharmacokinetic Evaluation of 99mTc-radiolabeled Solid Lipid Nanoparticles and Chitosan Coated Solid Lipid Nanoparticles

2020 ◽  
Vol 20 (13) ◽  
pp. 1044-1052
Author(s):  
Nasrin Abbasi Gharibkandi ◽  
Sajjad Molavipordanjani ◽  
Jafar Akbari ◽  
Seyed Jalal Hosseinimehr
Keyword(s):  
Solid Lipid Nanoparticles ◽  
Lipid Nanoparticles ◽  
High Resistivity ◽  
Scanning Calorimetry ◽  
Liver Uptake ◽  
Solid Lipid ◽  
Transmission Electron ◽  
Main Portion ◽  
Pharmacokinetic Behavior

Background: Solid Lipid Nanoparticles (SLNs) possess unique in vivo features such as high resistivity, bioavailability, and habitation at the target site. Coating nanoparticles with polymers such as chitosan greatly affects their pharmacokinetic behavior, stability, tissue uptake, and controlled drug delivery. The aim of this study was to prepare and evaluate the biodistribution of 99mTc-labeled SLNs and chitosan modified SLNs in mice. Methods: 99mTc-oxine was prepared and utilized to radiolabel pre-papered SLNs or chitosan coated SLNs. After purification of radiolabeled SLNs (99mTc-SLNs) and radiolabeled chitosan-coated SLNs (99mTc-Chi-SLNs) using Amicon filter, they were injected into BALB/c mice to evaluate their biodistribution patterns. In addition, nanoparticles were characterized using Transmission Electron Microscopy (TEM), Fourier-transform Infrared Spectroscopy (FTIR), Differential Scanning Calorimetry (DSC), X-ray Powder Diffraction (XRD) and Dynamic Light Scattering (DLS). Results: 99mTc-oxine with high radiochemical purity (RCP~100%) and stability (RCP > 97% at 24 h) was used to provide 99mTc-SLNs and 99mTc-Chi-SLNs with high initial RCP (100%). TEM image and DLS data suggest 99mTc- SLNs susceptibility to aggregation. To that end, the main portion of 99mTc-SLNs radioactivity accumulates in the liver and intestines, while 99mTc-Chi-SLNs sequesters in the liver, intestines and kidneys. The blood radioactivity of 99mTc-Chi-SLNs was higher than that of 99mTc-SLNs by 7.5, 3.17 and 3.5 folds at 1, 4 and 8 h post-injection. 99mTc- Chi-SLNs uptake in the kidneys in comparison with 99mTc-SLNs was higher by 37.48, 5.84 and 11 folds at 1, 4 and 8h. Conclusion: The chitosan layer on the surface of 99mTc-Chi-SLNs reduces lipophilicity in comparison with 99mTc- SLNs. Therefore, 99mTc-Chi-SLNs are less susceptible to aggregation, which leads to their lower liver uptake and higher kidney uptake and blood concentration.

Growth of homogeneous high resistivity fz silicon crystals under magnetic filed bias

1981 ◽  
Vol 55 (2) ◽  
pp. 406-408 ◽  
Author(s):  
N. De Leon ◽  
J. Guldberg ◽  
J. Salling
Keyword(s):  
High Resistivity ◽  
Silicon Crystals ◽  
Magnetic Filed

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

scholarly journals The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped TiO2 Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3230
Author(s):  
Theeranuch Nachaithong ◽  
Narong Chanlek ◽  
Pairot Moontragoon ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Loss Tangent ◽  
Barrier Layer ◽  
Dielectric Response ◽  
High Resistivity ◽  
Low Loss ◽  
Rutile Tio2 ◽  
Complex Defect ◽  
Very High ◽  
Co Doped

(Co, Nb) co-doped rutile TiO2 (CoNTO) nanoparticles with low dopant concentrations were prepared using a wet chemistry method. A pure rutile TiO2 phase with a dense microstructure and homogeneous dispersion of the dopants was obtained. By co-doping rutile TiO2 with 0.5 at.% (Co, Nb), a very high dielectric permittivity of ε′ » 36,105 and a low loss tangent of tanδ » 0.04 were achieved. The sample–electrode contact and resistive outer-surface layer (surface barrier layer capacitor) have a significant impact on the dielectric response in the CoNTO ceramics. The density functional theory calculation shows that the 2Co atoms are located near the oxygen vacancy, creating a triangle-shaped 2CoVoTi complex defect. On the other hand, the substitution of TiO2 with Nb atoms can form a diamond-shaped 2Nb2Ti complex defect. These two types of complex defects are far away from each other. Therefore, the electron-pinned defect dipoles cannot be considered the primary origins of the dielectric response in the CoNTO ceramics. Impedance spectroscopy shows that the CoNTO ceramics are electrically heterogeneous, comprised of insulating and semiconducting regions. Thus, the dielectric properties of the CoNTO ceramics are attributed to the interfacial polarization at the internal insulating layers with very high resistivity, giving rise to a low loss tangent.

scholarly journals “Perfect” Terahertz Vortex Beams Formed Using Diffractive Axicons and Prospects for Excitation of Vortex Surface Plasmon Polaritons

2021 ◽  
Vol 11 (2) ◽  
pp. 717
Author(s):  
Boris Knyazev ◽  
Valery Cherkassky ◽  
Oleg Kameshkov
Keyword(s):  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Bessel Beam ◽  
Diffraction Theory ◽  
Terahertz Range ◽  
High Resistivity ◽  
Visible Range ◽  
Optical Elements ◽  
Scalar Diffraction ◽  
Plasmon Polaritons

Transformation of a Bessel beam by a lens results in the formation of a “perfect” vortex beam (PVB) in the focal plane of the lens. The PVB has a single-ring cross-section and carries an orbital angular momentum (OAM) equal to the OAM of the “parent” beam. PVBs have numerous applications based on the assumption of their ideal ring-type structure. For instance, we proposed using terahertz PVBs to excite vortex surface plasmon polaritons propagating along cylindrical conductors and the creation of plasmon multiplex communication lines in the future (Comput. Opt. 2019, 43, 992). Recently, we demonstrated the formation of PVBs in the terahertz range using a Bessel beam produced using a spiral binary silicon axicon (Phys. Rev. A 2017, 96, 023846). It was shown that, in that case, the PVB was not annular, but was split into nested spiral segments, which was obviously a consequence of the method of Bessel beam generation. The search for methods of producing perfect beams with characteristics approaching theoretically possible ones is a topical task. Since for the terahertz range, there are no devices like spatial modulators of light in the visible range, the main method for controlling the mode composition of beams is the use of diffractive optical elements. In this work, we investigated the characteristics of perfect beams, the parent beams being quasi-Bessel beams created by three types of diffractive phase axicons made of high-resistivity silicon: binary, kinoform, and “holographic”. The amplitude-phase distributions of the field in real perfect beams were calculated numerically in the approximation of the scalar diffraction theory. An analytical expression was obtained for the case of the binary axicon. It was shown that a distribution closest to an ideal vortex was obtained using a holographic axicon. The resulting distributions were compared with experimental and theoretical distributions of the evanescent field of a plasmon near the gold–zinc sulfide–air surface at different thicknesses of the dielectric layer, and recommendations for experiments were given.

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

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