scholarly journals Static magnetic, complex dielectric and complex permeability properties of aluminum substituted hexagonal barium ferrites based on doping concentration

2021 ◽  
Vol 129 (9) ◽  
pp. 566-573
Author(s):  
Xuehai ZHOU ◽  
Ke ZHOU ◽  
Tianchi ZHANG ◽  
Lining FAN ◽  
Hongbo ZHANG ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Complex Permeability ◽  
Barium Ferrites ◽  
Magnetic Complex

Effect of Complex Permeability on Circuit Parameters of CPW with Magnetic Noise Suppression Sheet

2020 ◽  
Vol E103.B (9) ◽  
pp. 899-902
Author(s):  
Sho MUROGA ◽  
Motoshi TANAKA ◽  
Takefumi YOSHIKAWA ◽  
Yasushi ENDO
Keyword(s):  
Noise Suppression ◽  
Complex Permeability ◽  
Magnetic Noise

Structural and Magnetic Hysteresis Properties of Co-Zr Substituted Hexagonal Barium Ferrites

2015 ◽  
Vol 7 (1) ◽  
pp. 1346-1351
Author(s):  
Ch.Gopal Reddy ◽  
Ch. Venkateshwarlu ◽  
P. Vijaya Bhasker Reddy
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Magnetic Hysteresis ◽  
Grain Morphology ◽  
Hexagonal Structure ◽  
Ion Composition ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
Barium Ferrites ◽  
Xrd Patterns

Co-Zr substituted M-type hexagonal barium ferrites, with chemical formula BaCoxZrxFe12-2xO19 (where x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), have been synthesized by double sintering ceramic method. The crystallographic properties, grain morphology and magnetic properties of these ferrites have been investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM). The XRD patterns confirm the single phase with hexagonal structure of prepared ferrites. The magnetic properties have been investigated as a function of Co and Zr ion composition at an applied field in the range of 20 KOe. These studies indicate that the saturation magnetization (Ms) in the samples increases initially up to the Co-Zr composition of x=0.6 and decreases thereafter. On the other hand, the coercivity (Hc) and Remanent magnetization (Mr) are found to decrease continuously with increasing Co-Zr content. This property is most useful in permanent magnetic recording. The observed results are explained on the basis of site occupation of Co and Zr ions in the samples.

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Impact of co-doping concentration in copolymer network liquid crystals

2019 ◽  
Vol 46 (10) ◽  
pp. 1485-1493 ◽  
Author(s):  
Fatemeh Jahanbakhsh ◽  
Alexander Lorenz
Keyword(s):  
Liquid Crystals ◽  
Doping Concentration ◽  
Co Doping ◽  
Copolymer Network
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