scholarly journals Pb-substitution effect on the electronic properties of Bi2201, Bi2212 and Bi2223 superconductors

2021 ◽  
Vol 129 (5) ◽  
pp. 241-248
Author(s):  
Yoshihito SHIMABUKURO ◽  
Tetsuto WATANABE ◽  
Shiro KAMBE
Keyword(s):  
Electronic Properties ◽  
Substitution Effect ◽  
Pb Substitution

Theoretical Study of Octahedral Substitution Effect in Delaminated Pyrophyllite: Physicochemical Properties and Applications

2021 ◽  
Author(s):  
Carla Romina Luna ◽  
Walter Guillermo Reimers ◽  
Marcelo Avena ◽  
Alfredo Juan
Keyword(s):  
Dft Calculations ◽  
Physicochemical Properties ◽  
Electronic Properties ◽  
Theoretical Study ◽  
Substitution Effect ◽  
Isomorphic Substitution ◽  
Octahedral Sheet ◽  
Octahedral Substitution

We have studied, using DFT calculations, some geometrical and electronic properties of delaminated pyrophyllite (D-P) and the corresponding layers that resulted from three isomorphic substitution on the octahedral sheet (Mg2+,...

scholarly journals High-Pressure Synthesis and Superconducting Properties of NaCl-Type In1−xPbxTe (x = 0–0.8)

2020 ◽  
Vol 5 (1) ◽  
pp. 14 ◽  
Author(s):  
Masayoshi Katsuno ◽  
Rajveer Jha ◽  
Kazuhisa Hoshi ◽  
Ryota Sogabe ◽  
Yosuke Goto ◽  
...  
Keyword(s):  
High Pressure ◽  
Weak Coupling ◽  
Substitution Effect ◽  
Lattice Parameter ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
High Pressure Synthesis ◽  
Bulk Superconductivity ◽  
Pressure Synthesis ◽  
Pb Substitution

We have investigated the Pb-substitution effect upon the superconductivity of NaCl-type In1−xPbxTe. Polycrystalline samples with x = 0–0.8 were synthesized using high-pressure synthesis. The lattice parameter was systematically increased by Pb substitution. For x ≤ 0.6, bulk superconductivity was observed, and the superconducting transition temperature increased from 3 K (for InTe) to 5 K by Pb substitutions. From analyses of specific heat jumps at the superconducting transition, conventional (phonon-mediated) weak-coupling pairing mechanisms were suggested for In1−xPbxTe.

Pb substitution effect on the normal and superconductivity states transport of polycrystalline MgB2

2006 ◽  
Vol 3 (9) ◽  
pp. 2986-2989
Author(s):  
M. Zouaoui ◽  
M. Annabi ◽  
F. Ben Azzouz ◽  
M. Ben Salem
Keyword(s):  
Substitution Effect ◽  
Pb Substitution

Te substitution effect on electronic properties of β-FeSe thin films

2010 ◽  
Vol 470 ◽  
pp. S480-S481 ◽  
Author(s):  
H.H. Chang ◽  
J.Y. Luo ◽  
C.T. Wu ◽  
F.C. Hsu ◽  
T.K. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Substitution Effect

Strong π-delocalization and substitution effect on electronic properties of dithienylpyrrole-containing bipyridine ligands and corresponding ruthenium complexes

2012 ◽  
Vol 41 (16) ◽  
pp. 4833 ◽  
Author(s):  
Sajida Noureen ◽  
Stefano Caramori ◽  
Antonio Monari ◽  
Xavier Assfeld ◽  
Roberto Argazzi ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ruthenium Complexes ◽  
Substitution Effect

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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