scholarly journals Low-temperature chemical synthesis of nanostructured indium nitride from indium hydroxide

2020 ◽  
Vol 128 (1) ◽  
pp. 42-45 ◽  
Author(s):  
Liwei FANG ◽  
Liangbiao WANG ◽  
Lei JIANG ◽  
Ciyang ZHANG ◽  
Tingting ZHOU ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis ◽  
Indium Nitride ◽  
Indium Hydroxide

Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

2017 ◽  
Vol 471 ◽  
pp. 62-65 ◽  
Author(s):  
Liangbiao Wang ◽  
Qianli Shen ◽  
Dejian Zhao ◽  
Juanjuan Lu ◽  
Weiqiao Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis ◽  
Indium Nitride

Low-temperature wet chemical synthesis strategy of In2O3 for selective detection of NO2 down to ppb levels

2018 ◽  
Vol 735 ◽  
pp. 2102-2110 ◽  
Author(s):  
S.T. Navale ◽  
Chenshitao Liu ◽  
Z. Yang ◽  
V.B. Patil ◽  
P. Cao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis ◽  
Selective Detection ◽  
Wet Chemical Synthesis ◽  
Synthesis Strategy ◽  
Wet Chemical

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Low temperature wet chemical synthesis of good optical quality vertically aligned crystalline ZnO nanorods

2007 ◽  
Vol 18 (3) ◽  
pp. 035606 ◽  
Author(s):  
T Mahalingam ◽  
Kyung Moon Lee ◽  
Kyung Ho Park ◽  
Soonil Lee ◽  
Yeonghwan Ahn ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis ◽  
Zno Nanorods ◽  
Optical Quality ◽  
Wet Chemical Synthesis ◽  
Vertically Aligned ◽  
Wet Chemical ◽  
Good Optical Quality

Chemical synthesis of NaTaO3 powder at low-temperature

2005 ◽  
Vol 59 (23) ◽  
pp. 2920-2922 ◽  
Author(s):  
Jiasheng Xu ◽  
Dongfeng Xue ◽  
Chenglin Yan
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis

Morphology and Low Temperature Electrical Transport in Heteroepitaxial Indium Nitride Films

1992 ◽  
Vol 263 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
T. J. Kistenmacher
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Deposition Temperature ◽  
Amorphous Materials ◽  
Indium Nitride ◽  
Electrical Contact ◽  
Rf Magnetron Sputtering ◽  
Electrical Mobility ◽  
Reactive Rf Magnetron Sputtering

ABSTRACTThe correlation of low temperature electrical transport with the evolution of heteroepitaxy and morphology for sputtered indium nitride thin films has been studied. A series of indium nitride films were deposited at temperatures ranging from 50 -650 °C by reactive rf magnetron sputtering onto the (00.1) face of sapphire. Above 350 °C, a transition occurs from a continuous morphology, in which grains are in intimate electrical contact, to an open, porous morphology with poor electrical contact. This transition in morphology deeply affects the electrical transport of the semiconductor. At low deposition temperature, the electrical transport is dominated by the relatively weak intergrain scattering leading to films with moderate mobility. As the deposition temperature is raised, the increasingly porous nature of the film leads to a deterioration in electrical mobility. It is proposed here that the relevant physics of these films is analogous to that for granular solids with a distribution of electrical connectivities that suggests a scattering potential dominated by disorder. In fact, the temperature dependence of the resistivity is found to be analogous to that observed in disordered and amorphous materials. In particular, the resistivity is characterized by: 1) A very weak temperature dependence; 2) The observation of a resistance minimum; and, 3) A steep rise in the low temperature (<4K) resistivity that follows a T1/ dependence.

scholarly journals Low-Temperature Chemical Synthesis of High-Purity Diacylglycerols (DAG) from Monoacylglycerols (MAG)

Lipids ◽  
2014 ◽  
Vol 50 (2) ◽  
pp. 219-226 ◽  
Author(s):  
Łukasz Pazdur ◽  
Jeroen Geuens ◽  
Hannes Sels ◽  
Serge M. F. Tavernier
Keyword(s):  
Low Temperature ◽  
Chemical Synthesis ◽  
High Purity
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