scholarly journals Grain-oriented polycrystalline sodium titanoaluminate formed by reactive diffusion between solid Al2TiO5 and liquid [25 mol % Na2O and 75 mol % TiO2]

2019 ◽  
Vol 127 (3) ◽  
pp. 150-157
Author(s):  
Koichiro FUKUDA ◽  
Shin HASEGAWA ◽  
Eisei HASEGAWA ◽  
Daisuke URUSHIHARA ◽  
Toru ASAKA
Keyword(s):  
Reactive Diffusion ◽  
Oriented Polycrystalline

scholarly journals Laser Floating Zone Growth: Overview, Singular Materials, Broad Applications, and Future Perspectives

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 38
Author(s):  
Francisco Rey-García ◽  
Rafael Ibáñez ◽  
Luis Alberto Angurel ◽  
Florinda M. Costa ◽  
Germán F. de la Fuente
Keyword(s):  
Equilibrium Phase ◽  
Polycrystalline Materials ◽  
Floating Zone ◽  
High Crystalline Quality ◽  
Experimental Parameters ◽  
Phase Selectivity ◽  
Oriented Polycrystalline ◽  
Laser Heated ◽  
Lfz Technique ◽  
Zone Growth

The Laser Floating Zone (LFZ) technique, also known as Laser-Heated Pedestal Growth (LHPG), has been developed throughout the last several decades as a simple, fast, and crucible-free method for growing high-crystalline-quality materials, particularly when compared to the more conventional Verneuil, Bridgman–Stockbarger, and Czochralski methods. Multiple worldwide efforts have, over the years, enabled the growth of highly oriented polycrystalline and single-crystal high-melting materials. This work attempted to critically review the most representative advancements in LFZ apparatus and experimental parameters that enable the growth of high-quality polycrystalline materials and single crystals, along with the most commonly produced materials and their relevant physical properties. Emphasis will be given to materials for photonics and optics, as well as for electrical applications, particularly superconducting and thermoelectric materials, and to the growth of metastable phases. Concomitantly, an analysis was carried out on how LFZ may contribute to further understanding equilibrium vs. non-equilibrium phase selectivity, as well as its potential to achieve or contribute to future developments in the growth of crystals for emerging applications.

Reactive diffusion in W–Mo–Si thin films

2010 ◽  
Vol 103 (1) ◽  
pp. 111-116 ◽  
Author(s):  
A. Derafa ◽  
M.-C. Record ◽  
D. Mangelinck ◽  
R. Halimi ◽  
A. Bouabellou
Keyword(s):  
Thin Films ◽  
Reactive Diffusion

Polarization-dependence of the Raman response of free-standing strained Ce0.8Gd0.2O2 membranes

2021 ◽  
Author(s):  
Alexander Konetschny ◽  
Marcel Weinhold ◽  
Christian Heiliger ◽  
Matthias Thomas Elm ◽  
Peter J. Klar
Keyword(s):  
Thin Films ◽  
Strain State ◽  
Polarization Dependence ◽  
Raman Mapping ◽  
Free Standing ◽  
Excitation Light ◽  
Oriented Polycrystalline ◽  
Raman Response

Square-shaped Ce0.8Gd0.2O2 (GDC) membranes are prepared by microstructuring techniques from (111)-oriented, polycrystalline GDC thin films. The strain state of the membranes is investigated by micro-Raman mapping using polarized excitation light....

The Effect of Temperature and Pressure on Residual Stress in LPCVD Polysilicon Films

1992 ◽  
Vol 276 ◽  
Author(s):  
D-G. Oei ◽  
S. L. McCarthy
Keyword(s):  
Residual Stress ◽  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
Oriented Polycrystalline ◽  
Temperature And Pressure ◽  
Reduced Pressures

ABSTRACTMeasurements of the residual stress in polysilicon films made by Low Pressure Chemical Vapor Deposition (LPCVD) at different deposition pressures and temperatures are reported. The stress behavior of phosphorus (P)-ion implanted/annealed polysilicon films is also reported. Within the temperature range of deposition, 580 °C to 650 °C, the stress vs deposition temperature plot exhibits a transition region in which the stress of the film changes from highly compressive to highly tensile and back to highly compressive as the deposition temperature increases. This behavior was observed in films that were made by the LPCVD process at reduced pressures of 210 and 320 mTORR. At deposition temperatures below 590 °C the deposit is predominantly amorphous, and the film is highly compressive; at temperatures above 610 °C (110) oriented polycrystalline silicon is formed exhibiting high compressive residual stress.

An Overview of the Interdiffusion Studies in Mo-Si and W-Si Systems

2014 ◽  
Vol 354 ◽  
pp. 79-83
Author(s):  
Soumitra Roy ◽  
Soma Prasad ◽  
Aloke Paul
Keyword(s):  
Crystal Structures ◽  
Atomic Number ◽  
Diffusion Coefficients ◽  
Relative Increase ◽  
The Other ◽  
Reactive Diffusion ◽  
Refractory Elements ◽  
Other Hand ◽  
Two Systems ◽  
Diffusion Rates

The growth of phases by reactive diffusion in Mo-Si and W-Si systems are compared. The crystal structures of MSi2 and M5Si3 phases (M = Mo, W) are similar in these two systems. However, the diffusion rates of the components change systematically with a change in the atomic number. Integrated diffusion coefficients in both phases increase with an increasing atomic number of refractory elements i.e. from Mo to W. On the other hand, the ratio of diffusivities of the components decreases. This indicates a relative increase in the diffusion rates of the metal components with increasing atomic number and a difference in defects concentrations in these two systems.

scholarly journals Kinetics of Solid-State Reactive Diffusion in the Cu/Zn System

2017 ◽  
Vol 58 (1) ◽  
pp. 16-22 ◽  
Author(s):  
Yoshiki Takamatsu ◽  
Minho O ◽  
Masanori Kajihara
Keyword(s):  
Solid State ◽  
Reactive Diffusion ◽  
Kinetics Of
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