scholarly journals Impedance response of lead zirconate titanate thick film structures on silicon substrates for a high frequency ultrasonic transducer

2013 ◽  
Vol 121 (1416) ◽  
pp. 670-674 ◽  
Author(s):  
Takashi IIJIMA ◽  
Naoto KOCHI ◽  
Soichiro OKAMURA
Keyword(s):  
Thick Film ◽  
Lead Zirconate Titanate ◽  
High Frequency ◽  
Ultrasonic Transducer ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Impedance Response ◽  
Zirconate Titanate

Porous lead zirconate titanate ceramics with optimized acoustic properties for high-frequency ultrasonic transducer applications

2017 ◽  
Vol 142 (4) ◽  
pp. 2576-2576 ◽  
Author(s):  
Marc Lethiecq ◽  
Danjela Kuscer ◽  
Julien Bustillo ◽  
Andre-Pierre Abellard ◽  
Tina Bakaric ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
High Frequency ◽  
Ultrasonic Transducer ◽  
Lead Zirconate ◽  
Acoustic Properties ◽  
Zirconate Titanate ◽  
Titanate Ceramics

Lead zirconate titanate thick‐film ultrasonic transducer for 1‐ to 50‐MHz frequency bands fabricated by hydrothermal method

2006 ◽  
Vol 120 (5) ◽  
pp. 3113-3113
Author(s):  
Mutsuo Ishikawa ◽  
Minoru Kurosawa ◽  
Tomohito Hasegawa ◽  
Hiroshi Kitsunai ◽  
Akito Endoh ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Thick Film ◽  
Lead Zirconate Titanate ◽  
Ultrasonic Transducer ◽  
Lead Zirconate ◽  
Frequency Bands ◽  
Zirconate Titanate

Mist Deposition of Micron-Thick Lead Zirconate Titanate Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Mark D. Losego ◽  
Susan Trolier-McKinstry
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Deposition ◽  
Lead Zirconate ◽  
Limiting Factors ◽  
Process Time ◽  
Silicon Substrates ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Chamber Temperature ◽  
Thick Lead

ABSTRACTA majority of the work published on liquid source misted chemical deposition (LSMCD) has focused on the fabrication of thin ferroelectric films for random access memory (RAM) applications. However, the ability of LSMCD to combine the characteristically good stoichiometry control of a chemical solution deposition process with good film conformality, makes this a desirable technique for other applications, including microactuators and integrated passive components. For these applications, though, LSMCD is limited by its low throughput. This paper describes the feasibility of depositing micron-thick lead zirconate titanate (PZT) films using the LSMCD tool. PZT films of 52/48 composition were deposited on both platinized silicon and platinized alumina substrates. The chamber temperature and the delivery geometry of the LSMCD tool were identified as limiting factors in the rate at which micron-thick samples can be prepared. By switching to a focused nozzle delivery geometry and increasing the chamber temperature from room temperature to 60°C, the total process time for 1 μm thick films can be reduced from 480 min to 90 min. Polarization hysteresis measurements indicated a 75% higher remanent polarization for PZT films deposited on platinized alumina substrates (35 μC/cm2) compared to those deposed on platinized silicon substrates (20 μC/cm2). The polarization loop for the silicon substrate sample was also tilted. These observations are evidence of higher tensile stresses in the PZT films deposited on silicon substrates due to a larger mismatch in the thermal expansion coefficients of the film and the substrate.

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