scholarly journals Very High Pressure Sintering of Cubic Boron Nitride with PSZ Additive

1991 ◽  
Vol 99 (1145) ◽  
pp. 97-100
Author(s):  
Haruo YOSHIDA ◽  
Shoichi KUME
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Pressure Sintering ◽  
Very High

High-pressure sintering of cubic boron nitride

1986 ◽  
Vol 21 (12) ◽  
pp. 4347-4351 ◽  
Author(s):  
M. M. Bindal ◽  
R. K. Nayar ◽  
S. K. Singhal ◽  
Ajay Dhar ◽  
Rajeev Chopra
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Pressure Sintering

High pressure sintering of cubic boron nitride compacts with Al and AlN

2008 ◽  
Vol 17 (12) ◽  
pp. 2062-2066 ◽  
Author(s):  
Ran Lv ◽  
Jin Liu ◽  
Yongjun Li ◽  
Sicheng Li ◽  
Zili Kou ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Pressure Sintering

Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solvent under High Pressure

2007 ◽  
Vol 46 (11) ◽  
pp. 7388-7391 ◽  
Author(s):  
Yoichi Kubota ◽  
Kosuke Kosuda ◽  
Takashi Taniguchi
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Cubic Boron Nitride

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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