scholarly journals Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field

2007 ◽  
Vol 115 (1341) ◽  
pp. 341-343 ◽  
Author(s):  
Shigeru TANAKA ◽  
Yukari ISHIKAWA ◽  
Noriyoshi SHIBATA
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Light ◽  
Zno Thin Films ◽  
Electrical Field ◽  
Near Infrared Light ◽  
Doped Zno ◽  
Er Doped

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films

2006 ◽  
Vol 301 ◽  
pp. 71-74 ◽  
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Dai Nezaki ◽  
Mitsuhiro Okamoto ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Linear Behavior ◽  
Doped Zno ◽  
Er Doped

Er-doped ZnO thin films which emitted intense infrared light in the vicinity of 1.5 μm were investigated from points of view of the microstructure and electrical properties. The result of X-ray diffraction (XRD) pattern revealed that the crystal lattice of ZnO was apparently expanded by doping of Er ions. Electrical resistance in the direction of thickness of Er-doped ZnO film showed linear behavior, which was resemble to that of undoped ZnO film. Infrared light emission phenomenon of the film was related to the chemical / physical state of Er ions in ZnO matrix.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Doped Zno ◽  
Er Doped

Near-Infrared Light Absorption Enhancement in Graphene Induced by the Tamm State in Optical Thin Films

2019 ◽  
Vol 39 (1) ◽  
pp. 0131001
Author(s):  
黎志文 Li Zhiwen ◽  
陆华 Lu Hua ◽  
李扬武 Li Yangwu ◽  
焦晗 Jiao Han ◽  
赵建林 Zhao Jianlin
Keyword(s):  
Thin Films ◽  
Light Absorption ◽  
Near Infrared ◽  
Infrared Light ◽  
Absorption Enhancement ◽  
Near Infrared Light ◽  
Tamm State

Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films

2006 ◽  
pp. 189-192 ◽  
Author(s):  
Yukari Ishikawa ◽  
Junichi Niitsuma ◽  
Shigeru Tanaka ◽  
Dai Nezaki ◽  
Mitsuhiro Okamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Er Doped

Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films

2006 ◽  
Vol 301 ◽  
pp. 189-192
Author(s):  
Yukari Ishikawa ◽  
Junichi Niitsuma ◽  
Shigeru Tanaka ◽  
Dai Nezaki ◽  
Mitsuhiro Okamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Defects ◽  
Undoped Sample ◽  
Zno Thin Films ◽  
Zno Film ◽  
Internal Transition ◽  
Luminescent Mechanism ◽  
Doped Zno ◽  
Zno Crystal ◽  
Er Doped

In order to clarify the fundamental luminescent mechanism of undoped and Er-doped ZnO thin films synthesized by sputtering method, cathodoluminescence (CL) from the samples formed on several kinds of substrate were measured. There was no explicit peak identified with luminescence from ZnO crystal defects in undoped sample, on the contrary, three sharp luminescent peaks were observed in the case of Er-doped ZnO film due to the internal transition of the additive Er ions in the CL spectrum. The mechanism was investigated in comparison with photoluminescence (PL).

Influence of Annealing on the Structure and 1.54 µm Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol–Gel Method

2011 ◽  
Vol 50 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Lei Miao ◽  
Xiudi Xiao ◽  
Fanyong Ran ◽  
Sakae Tanemura ◽  
Gang Xu
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Er Doped

Gallium codoping for high visible and near-infrared transmission in Al-doped ZnO thin films for industrial-scale applications

2015 ◽  
Vol 33 (2) ◽  
pp. 021508 ◽  
Author(s):  
Ji Hun Park ◽  
Sang Ho Shin ◽  
Hyung Seok Yoon ◽  
Yongbae Jeon ◽  
Seunghun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Zno Thin Films ◽  
Industrial Scale ◽  
Infrared Transmission ◽  
Doped Zno
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