scholarly journals Special Issue Ceramics Integration. Effects of Ambient Gas and Film Thickness on Orientation and Surface Morphology of Sr0.5Ba0.5Nb2O6 Thin Films Prepared by Pulsed Laser Deposition.

2002 ◽  
Vol 110 (1281) ◽  
pp. 368-372
Author(s):  
Te-Wei CHIU ◽  
Naoki WAKIYA ◽  
Kazuo SHINOZAKI ◽  
Nobuyasu MIZUTANI
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Film Thickness ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Special Issue ◽  
Ambient Gas

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition

2009 ◽  
Vol 256 (4) ◽  
pp. 1227-1231 ◽  
Author(s):  
M. Zakir Hossain ◽  
Tomohiro Mimura ◽  
Noboru Miura ◽  
Shin-ichiro Uekusa
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Structure and Optical Properties of SrBi2Nb2O9 Thin Films Fabricated by Pulsed Laser Deposition

2008 ◽  
Vol 368-372 ◽  
pp. 305-307
Author(s):  
Kan Song Chen ◽  
Hao Shuang Gu ◽  
Jian San Zou ◽  
Li Wang ◽  
Yi Huang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Energy Gap ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Layered Perovskite

SrBi2Nb2O9 (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The crystallization behavior and surface morphology were studied at various oxygen pressures by XRD and AFM. The results indicated that the films had polycrystalline structure with a single layered perovskite phase, and exhibited higher crystalline quality, less rough surface morphology, and larger grain size with increasing oxygen pressure. The optical transmittance of the samples was measured in the wavelength range 200-900 nm, and the dispersion relation of refractive indices and wavelength was found to follow the single electron oscillation model. The energy gap of SBN films grown at oxygen pressure of 5 Pa was estimated to be around 3.88 eV by assuming a direct transition between valence and conduction bands.

scholarly journals Structural, surface morphology, dielectric and magnetic properties of holmium doped BiFeO3 thin films prepared by pulsed laser deposition

2018 ◽  
Vol 662 ◽  
pp. 83-89 ◽  
Author(s):  
Sadia Sharif ◽  
Ghulam Murtaza ◽  
Turgut Meydan ◽  
Paul I. Williams ◽  
Jerome Cuenca ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bifeo3 Thin Films ◽  
Structural Surface
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