scholarly journals Effect of Grain Growth on the Thermal Conductivity of Silicon Nitride

1996 ◽  
Vol 104 (1205) ◽  
pp. 49-53 ◽  
Author(s):  
Naoto HIROSAKI ◽  
Yusuke OKAMOTO ◽  
Motohide ANDO ◽  
Fumio MUNAKATA ◽  
Yoshio AKIMUNE
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Grain Growth

Mechanical and Thermal Properties of Silicon Nitride Hot Pressed with Adding Rare-Earth Oxides

2005 ◽  
Vol 486-487 ◽  
pp. 181-184 ◽  
Author(s):  
Dae Ho Choi ◽  
Byung Kyu Moon ◽  
Rak Joo Sung ◽  
Seung Ho Kim ◽  
Koichi Niihara
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Rare Earth ◽  
Silicon Nitride ◽  
Flexural Strength ◽  
Grain Growth ◽  
Rare Earth Oxides ◽  
Lattice Oxygen ◽  
Mechanical And Thermal Properties ◽  
Si3n4 Ceramics

Mechanical and thermal properties of Si3N4 ceramics with various rare-earth oxides (La2O3, CeO2, Lu2O3, Dy2O3, Sm2O3, Nd2O3, Yb2O3, and RuO2) were investigated. Flexural strength of silicon nitride with addition of 5vol% Nd2O3, CeO2, Dy2O3, and Sm2O3 showed higher value than that of silicon nitride with Lu2O3 and La2O3 added because they form denser microstructure and smaller elongated grain. Thermal conductivity of silicon nitride with an addition of 5vol% RuO2 was more enhanced than that of silicon nitride added with Nd2O3, Sm2O3, and Dy2O3 because the addition of RuO2 depressed grain growth. It is also associated with lattice oxygen governing thermal conductivity of Si3N4 when added rare-earth oxides.

Effect of sintering additive composition on the thermal conductivity of silicon nitride

1998 ◽  
Vol 13 (12) ◽  
pp. 3473-3477 ◽  
Author(s):  
Y. Okamoto ◽  
N. Hirosaki ◽  
M. Ando ◽  
F. Munakata ◽  
Y Akimune
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Grain Growth ◽  
Gas Pressure ◽  
Sintering Additive ◽  
Maximum Value ◽  
Additional Agent

The thermal conductivity of silicon nitride prepared with varying sintering additive compositions was studied. Samples of Si3N4 + 0.5 mol% Y2O3 + 0.5 mol% Nd2O3 and a further additional agent were gas pressure sintered at 2173 K. MgO or Al2O3 was employed as the additional agent. While both agents improved sinterability, the former promoted grain growth and the latter suppressed it. Thermal conductivity increased with increasing MgO content, and a maximum value of 128 Wm-1 K-1 was attained when 2 mol% MgO was added. In contrast, addition of Al2O3 degrades thermal conductivity. This is probably due to the suppression of grain growth and the dissolution of Al2O3 into Si3N4 grains.

scholarly journals Microstructure and Thermal Conductivity of Sintered Reaction-Bonded Silicon Nitride: The Particle Size Effects of MgO Additive

2018 ◽  
Vol 2018 ◽  
pp. 1-5 ◽  
Author(s):  
Shin-Il Go ◽  
Yinsheng Li ◽  
Jae-Woong Ko ◽  
Ha-Neul Kim ◽  
Se-Hun Kwon ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Particle Size ◽  
Silicon Nitride ◽  
Liquid Phase ◽  
Grain Growth ◽  
Microstructural Evolution ◽  
Size Effects ◽  
Phase Distribution ◽  
Particle Size Effect ◽  
Sintering Additive

The particle size effect of MgO as a sintering additive on the thermal conductivity of sintered reaction-bonded silicon nitride (SRBSN) was investigated. It was revealed that the size of MgO is critical for thermal conductivity with regard to the microstructural evolution process. That is, the abnormal grain growth promoted by an inhomogeneous liquid-phase distribution led to higher thermal conductivity when coarser MgO was added, whereas a relatively homogeneous liquid-phase distribution induced moderate grain growth and lower thermal conductivity when finer MgO was added.

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

Influence of additives on anisotropic grain growth in silicon nitride ceramics

2006 ◽  
Vol 422 (1-2) ◽  
pp. 85-91 ◽  
Author(s):  
P.F. Becher ◽  
G.S. Painter ◽  
N. Shibata ◽  
R.L. Satet ◽  
M.J. Hoffmann ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Grain Growth ◽  
Nitride Ceramics
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