scholarly journals Synthesis and Characterization of Zinc Sulfide Thin Films by Pyrolysis and Application to Thin Film Electroluminescence

1992 ◽  
Vol 100 (1157) ◽  
pp. 42-47
Author(s):  
Masao YOKOYAMA ◽  
Tsutomu NANAO ◽  
Tamiyuki EGUCHI ◽  
Masao TANIGUCHI
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Sulfide ◽  
Synthesis And Characterization

The synthesis and characterization of a hexanuclear copper–yttrium complex for deposition of semiconducting CuYO2–0.5Cu2O composite thin films

2015 ◽  
Vol 39 (2) ◽  
pp. 1031-1037 ◽  
Author(s):  
Sohail Ahmed ◽  
Muhammad Adil Mansoor ◽  
Wan Jefrey Basirun ◽  
Mehran Sookhakian ◽  
Nay Ming Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Synthesis And Characterization ◽  
Composite Thin Films

A new Cu–Y precursor was implemented for deposition of CuYO2–0.5Cu2O thin film for PEC studies.

Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

2020 ◽  
Vol 49 (14) ◽  
pp. 4306-4314
Author(s):  
Seong Ho Han ◽  
Raphael Edem Agbenyeke ◽  
Ga Yeon Lee ◽  
Bo Keun Park ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Synthesis And Characterization ◽  
Zno Thin Film ◽  
Layer Deposition

Novel zinc precursors were designed, synthesized and used for the deposition of ZnO thin films by ALD.

scholarly journals Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

2021 ◽  
Vol 7 (SpecialIssue) ◽  
pp. 377-381
Author(s):  
Aris Doyan ◽  
Susilawati Susilawati ◽  
Kehkashan Alam ◽  
Lalu Muliyadi ◽  
Firdaus Ali ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Layer ◽  
Band Gap ◽  
Band Gap Energy ◽  
Synthesis And Characterization ◽  
Bandgap Energy ◽  
Gap Energy

Synthesis and characterization of SnO2 thin films with various types of doping materials such as aluminum, fluorine and indium have been successfully carried out. This study aims to determine the effect of various types of doping materials on the quality of thin films such as the energy band gap produced. The results showed that the higher the doping concentration, the more transparent the layer formed. In addition, the optical properties of thin films such as band gap energy are affected by the applied doping. The direct and indirect values ​​of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer. Meanwhile, the lowest direct and indirect values ​​of band gap energy are in the thin layer of SnO2:(Al+F+In) for a percentage of 85:15%, namely 3.41 eV and 3.55 eV. The greater the amount of doping given, the smaller the bandgap energy produced. In addition, the more combinations of doping mixtures (aluminum, fluorine, and indium) given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used

Synthesis and characterization of tin (IV) oxide thin films

2021 ◽  
Vol 53 (5) ◽  
Author(s):  
M. Rahayi ◽  
M. H. Ehsani ◽  
Agnes C. Nkele ◽  
M. M. Shahidi ◽  
Fabian I. Ezema
Keyword(s):  
Thin Films ◽  
Synthesis And Characterization ◽  
Oxide Thin Films
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