scholarly journals Preparation of Metal Nanoparticles by Jet Electrodeposition Using Monocrystalline Silicon Substrate

2017 ◽  
pp. 9040-9050
Author(s):  
Lida Shen ◽  
Keyword(s):  
Metal Nanoparticles ◽  
Silicon Substrate ◽  
Monocrystalline Silicon ◽  
Jet Electrodeposition

Research on ultra-smooth machining technique for monocrystalline silicon substrate

2020 ◽  
Vol 67 (14) ◽  
pp. 1227-1232
Author(s):  
Zhe Wang ◽  
Lingqi Wu ◽  
Aihuan Dun ◽  
Yuanyuan Fang ◽  
Li Song ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Monocrystalline Silicon

Pulsed Nd:YAG laser treatment of monocrystalline silicon substrate

2011 ◽  
Vol 56 (1-4) ◽  
pp. 223-231 ◽  
Author(s):  
Wen-Tse Hsiao ◽  
Shih-Feng Tseng ◽  
Kuo-Cheng Huang ◽  
Yan-Hsin Wang ◽  
Ming-Fei Chen
Keyword(s):  
Laser Treatment ◽  
Nd:Yag Laser ◽  
Silicon Substrate ◽  
Monocrystalline Silicon ◽  
Pulsed Nd:Yag Laser

Electrical Characteristics of Thermal Spray Silicon Coatings

2000 ◽  
Vol 624 ◽  
Author(s):  
S.Y. Tan ◽  
R.J. Gambino ◽  
R. Goswami ◽  
S. Sampath ◽  
H. Herman
Keyword(s):  
Silicon Substrate ◽  
Resistivity Measurement ◽  
Thermal Spraying ◽  
Monocrystalline Silicon ◽  
Vacuum Plasma Spray ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Van Der Pauw ◽  
Characteristic Pressure

ABSTRACTPolycrystalline silicon deposits were formed on a monocrystalline silicon substrate by thermal spraying. The resulting structure exhibits a device characteristic. Pressure-induced transformations of silicon, namely, Si-III (BC-8) and Si-IX are identified by X-ray diffraction in a Si-I matrix on deposits formed by vacuum plasma spray. The presence of the Si-III and Si-IX indicates that the pressure-quenched silicon deposit is highly conductive, as determined by four-point van der Pauw resistivity measurement. Hall mobility measurements, combined with photoconductivity results, indicate that the highly conductive silicon deposit displays the same range of mobility as a polycrystalline deposit containing only Si-I. The silicon deposit, with or without metastable phases, displays the same photoconductivity properties. The silicon deposit on a monocrystalline silicon substrate exhibits rectifying I–Vcharacteristics, possibly caused by band bending of trapping states associated with impurities segregating at the polycrystalline deposit/monocrystalline substrate interface

Deposition of germanium film on monocrystalline silicon substrate with cut-off angle

2019 ◽  
Vol 522 ◽  
pp. 86-91 ◽  
Author(s):  
Meng Chen ◽  
Nuofu Chen ◽  
Quanli Tao ◽  
Zhenwen Chang ◽  
Jikun Chen
Keyword(s):  
Silicon Substrate ◽  
Monocrystalline Silicon ◽  
Germanium Film

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Transport Properties Of Metallic Nanowires On Silicon Substrate

2014 ◽  
Vol 2 (1) ◽  
pp. 20-23
Author(s):  
Jaskiran Kaur ◽  
◽  
Surinder Singh ◽  
Keyword(s):  
Transport Properties ◽  
Silicon Substrate ◽  
Metallic Nanowires
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