scholarly journals Elemental, Morphological, and Corrosion Characterization of Different Surface States of Co-Cr Alloy for Prosthodontic Applications

2016 ◽  
pp. 2982-2993 ◽  
Author(s):  
Youssef S. Al Jabbari ◽  
Keyword(s):  
Surface States

Characterization of surface states on patrimonial works of art

2001 ◽  
Vol 98 (9) ◽  
pp. 777-782 ◽  
Author(s):  
M. Elias ◽  
M. Menu
Keyword(s):  
Surface States ◽  
Works Of Art

Characterization of Different Surface States and Its Effects on the Oxidation Behaviours of Alloy 690TT

2012 ◽  
Vol 28 (4) ◽  
pp. 353-361 ◽  
Author(s):  
Zhiming Zhang ◽  
Jianqiu Wang ◽  
En-Hou Han ◽  
Wei Ke
Keyword(s):  
Surface States

Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements

2016 ◽  
Vol 56 (2) ◽  
Author(s):  
Pavel Geydt ◽  
Prokhor A. Alekseev ◽  
Mikhail S. Dunaevskiy ◽  
Tuomas Haggrén ◽  
Joona-Pekko Kakko ◽  
...  
Keyword(s):  
Vertical Structure ◽  
Surface Passivation ◽  
Surface States ◽  
Electric Properties ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Nanowires ◽  
Current Voltage

Current–voltage (I–V) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained I–V curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the I–V curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.

Characterization of Molecular Modified Surface States by Wavelength- and Time-Dependent Two-Photon Photoemission Spectroscopy

1997 ◽  
Vol 101 (20) ◽  
pp. 4085-4089 ◽  
Author(s):  
A. Kadyshevitch ◽  
R. Naaman ◽  
R. Cohen ◽  
D. Cahen ◽  
J. Libman ◽  
...  
Keyword(s):  
Surface States ◽  
Time Dependent ◽  
Photoemission Spectroscopy ◽  
Two Photon ◽  
Modified Surface

Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

1990 ◽  
Vol 204 ◽  
Author(s):  
T. P. Schneider ◽  
J. Cho ◽  
J. Vander Weide ◽  
S.E. Wells ◽  
G. Lucovsky ◽  
...  
Keyword(s):  
Surface Characterization ◽  
Hydrogen Plasma ◽  
Surface States ◽  
Diagnostic Techniques ◽  
Gas Analysis ◽  
Plasma Cleaning ◽  
Low Energy Electron ◽  
Diffraction Patterns ◽  
Surface Diffraction

ABSTRACTThis study details low pressure and low temperature cleaning of Si(100) surfaces. The properties of Si surfaces exposed to variations in plasma generated H are described. The diagnostic techniques used to study the processing conditions are residual gas analysis (RGA) and emission spectroscopy. The surface is characterized by low energy electron diffraction (LEED) and angle resolved uv-photoemission spectroscopy (ARUPS). During the cleaning, Si complexes are formed which indicates the removal of species from the Si(100) surface. Plasma cleaning at 300°C results in a Si(100) surface with 2×1 surface diffraction patterns as detected by LEED. Measurements by ARUPS with He I radiation show the absence of Si surface states on the Hpassivated surface. The ARUPS measurements also indicate that the H begins to desorb from the Si(100) H-passivated surface at ∼500°C.

Infrared Characterization of Rh Surface States and Their Adsorbates during the NO−CO Reaction

2000 ◽  
Vol 104 (10) ◽  
pp. 2265-2272 ◽  
Author(s):  
Khalid A. Almusaiteer ◽  
Steven S. C. Chuang
Keyword(s):  
Surface States

CONTROLLED SYNTHESIS AND CHARACTERIZATION OF CERIUM-DOPED ZnS NANOPARTICLES IN HMTA MATRIX

2011 ◽  
Vol 10 (03) ◽  
pp. 487-493 ◽  
Author(s):  
K. VIJAI ANAND ◽  
R. MOHAN ◽  
R. MOHAN KUMAR ◽  
M. KARL CHINNU ◽  
R. JAYAVEL
Keyword(s):  
Quantum Confinement Effect ◽  
Average Particle Size ◽  
Surface States ◽  
Deep Trap ◽  
Average Particle ◽  
Zns Nanoparticles ◽  
Selected Area Electron Diffraction ◽  
Luminescence Process ◽  
Photoluminescence Studies

Cerium-doped ZnS nanoparticles have been synthesized through hydrothermal method. The nanoparticles were stabilized using hexamethylenetetramine (HMTA) as surfactant in aqueous solution. The average particle size of the prepared samples is about 2 nm. The structure of the as-prepared ZnS nanoparticles is cubic (zinc blende) as demonstrated by X-ray powder diffraction (XRD) and selected area electron diffraction (SAED) analysis. TEM results showed that the synthesized nanoparticles were uniformly dispersed in the HMTA matrix without aggregation. The UV–Vis absorption spectra of the prepared ZnS nanoparticles show a considerable blueshift in the absorption band edge compared to bulk ZnS indicating a strong quantum confinement effect. Formation of HMTA-capped ZnS nanoparticles was confirmed by FTIR studies. Photoluminescence studies showed that the relative emission intensity of Ce3+ -doped ZnS nanoparticles is higher than that of undoped ZnS nanoparticles, which is due to the enhancement of radiative recombination in the luminescence process. The PL spectra showed two emission peaks at around 420 nm and 442 nm, which may be attributed to deep-trap emission or defect-related emission of ZnS and presence of various surface states.

A Model Photoemission Calculations Using Projection Operator Method

2003 ◽  
Vol 17 (15) ◽  
pp. 2897-2902
Author(s):  
B. Zoliana ◽  
Zaithanzauva Pachuau ◽  
Lalthakimi Zadeng ◽  
R. K. Thapa ◽  
P. K. Patra ◽  
...  
Keyword(s):  
Group Theory ◽  
Band Structure ◽  
Projection Operator ◽  
Surface States ◽  
Operator Method ◽  
Band Structure Calculations ◽  
Projection Operator Method ◽  
Structure Calculations ◽  
Bulk Band

We have shown in this report the application of projection operator method of group theory in deriving the wavefunctions for the surface state in Cu(110) which had been used in calculating photocurrent. This approach gives a qualitative characterization of surface states simply on the basis of existing bulk-band structure calculations.

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