Active-matrix organic light-emitting diode displays with indium gallium zinc oxide thin-film transistors and normal, inverted, and transparent organic light-emitting diodes

2011 ◽  
Vol 19 (4) ◽  
pp. 323 ◽  
Author(s):  
Hsing-Hung Hsieh ◽  
Tsung-Ting Tsai ◽  
Chin-Yu Chang ◽  
Shih-Feng Hsu ◽  
Ching-Sang Chuang ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Organic Light Emitting Diodes ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Active Matrix ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Indium Gallium

Minimizing Residual Images of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor-Based Flexible Organic Light-Emitting Diode Displays by Controlling Oxygen Partial Pressure

2020 ◽  
Vol 20 (11) ◽  
pp. 6916-6919
Author(s):  
Do Young Won ◽  
Hyun Min Kim ◽  
Yun Ju Oh ◽  
Manh-Cuong Nguyen ◽  
Rino Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Light Emitting Diode ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Light Emitting ◽  
Organic Light Emitting Diode

Plastic organic light emitting diode displays suffer from residual image, which is closely connected with the hysteresis of the driving thin-film transistor in the pixels. Therefore, in researching paper, we manufactured an OLED display comprise a polyimide substrate and an amorphous indium gallium zinc oxide thin film transistor active layer. Paper proposed a solution for reducing hysteresis through oxygen partial pressure control and evaluated it using hysteresis analysis. The results showed that hysteresis is strongly dependent on the threshold voltage is settled by the oxygen partial pressure while active layer deposition of the TFT. Moreover, hysteresis decreases with increasing temperature.

Residual Image Suppression Through Annealing Process of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor for Plastic Organic Light-Emitting Diode Display

2020 ◽  
Vol 20 (11) ◽  
pp. 6877-6883
Author(s):  
Do Young Won ◽  
Hyun Min Kim ◽  
Manh-Cuong Nguyen ◽  
Jae-Min Myoung ◽  
Rino Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Light Emitting ◽  
Organic Light ◽  
Residual Image ◽  
Indium Gallium

For the evaluation of the residual image suppression, the amorphous indium-gallium-zinc-oxide thin film transistor was manufactured with electric field shield metal on silicon oxide multi-buffer layer, without the need for a silicon crystallization process through the excimer laser process, and is advantageous for the manufacture of large-scale plastic organic light-emitting display. We conducted a study on the propensity to suppress a residual image according to the temperature of the annealing process in amorphous indium gallium zinc oxide. The evaluation divided by the ambient process temperature conditions to measure the change and restoration tendency of the gray current by the black/white current of thin film transistors, and for precise measurement of the current change intervals, the current was analyzed in 0.004 seconds per point. Through the study, residual image of amorphous Indium Gallium Zinc Oxide transistor was found to be suppressed as the temperature of the annealing crystallization increased from 250°C to 325°C, and there was no improvement effect on the 325°C or higher. The trend of threshold voltage shift of thin film transistors according to the two process temperature conditions, 250°C and 325°C, was analyzed by Two sample T analysis method, and the analysis confirmed that the trend of current deterioration is different through p-value 0.007.

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