10.4L: Late-News Paper: Joule Heating Induced Lift-off Technology for Large Area Flexible AMOLED Displays

2011 ◽  
Vol 42 (1) ◽  
pp. 118-120 ◽  
Author(s):  
Moo-Voon Ko ◽  
Choong-youl Im ◽  
Iljeong Lee ◽  
Jong-hyuk Lee ◽  
Sungchul Kim ◽  
...  
Keyword(s):  
Joule Heating ◽  
Large Area ◽  
Lift Off ◽  
Late News

Fabrication of large area nanogap electrodes for sensing applications

2013 ◽  
Vol 1530 ◽  
Author(s):  
A. Bendavid ◽  
L. Wieczorek ◽  
R. Chai ◽  
J. S. Cooper ◽  
B. Raguse
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Fabrication Method ◽  
Large Area ◽  
Sensor Applications ◽  
Sensing Applications ◽  
Lift Off ◽  
Nanogap Electrodes

ABSTRACTA large area nanogap electrode fabrication method combinig conventional lithography patterning with the of focused ion beam (FIB) is presented. Lithography and a lift-off process were used to pattern 50 nm thick platinum pads having an area of 300 μm × 300 μm. A range of 30-300 nm wide nanogaps (length from 300 μm to 10 mm ) were then etched using an FIB of Ga+ at an acceleration voltage of 30 kV at various beam currents. An investigation of Ga+ beam current ranging between 1-50 pA was undertaken to optimise the process for the current fabrication method. In this study, we used Monte Carlo simulation to calculate the damage depth in various materials by the Ga+. Calculation of the recoil cascades of the substrate atoms are also presented. The nanogap electrodes fabricated in this study were found to have empty gap resistances exceeding several hundred MΩ. A comparison of the gap length versus electrical resistance on glass substrates is presented. The results thus outline some important issues in low-conductance measurements. The proposed nanogap fabrication method can be extended to various sensor applications, such as chemical sensing, that employ the nanogap platform. This method may be used as a prototype technique for large-scale fabrication due to its simple, fast and reliable features.

64.5L: Late-News Paper: Large Area Flexible Display of Fiber OLED

2006 ◽  
Vol 37 (1) ◽  
pp. 1870 ◽  
Author(s):  
Kiyoshi Yase ◽  
Kenkichi Suzuki ◽  
Minoru Hiroshima ◽  
Akio Mimura ◽  
Yi Mei Shuu ◽  
...  
Keyword(s):  
Large Area ◽  
Flexible Display ◽  
Late News

Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off

2004 ◽  
Author(s):  
Fang-I Lai ◽  
Jung-Tang Chu ◽  
Chen-Fu Chu ◽  
Wen-Deng Liang ◽  
H.C. Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting ◽  
Lift Off

Performance of Low Resistivity Electrode Prepared by Electroless Plated for Amorphous Silicon Thin-Film Transistors

2007 ◽  
Vol 561-565 ◽  
pp. 1165-1168 ◽  
Author(s):  
Chien Yie Tsay ◽  
Chung Kwei Lin ◽  
Hong Ming Lin ◽  
Shih Chieh Chang ◽  
Bor Chuan Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Large Area ◽  
Silicon Thin Film ◽  
Adhesion Properties ◽  
Low Resistivity ◽  
N2 Atmosphere ◽  
Lift Off ◽  
Processing Steps

The TFTs array fabrication process for large-area TFT-LCD has been continuously developed for simplifying processing steps, improving performance and reducing cost in the process of mass production. In this study, the hydrogenated amorphous silicon (a-Si:H) TFTs with low resistivity electrodes , silver thin films, were prepared by using the selective deposition method that combined lift-off and electroless plated processes. This developed process can direct pattern the electrode of transistor devices without the etching process and provide ease processing steps. The as-deposited Ag films were annealed at 200 oC for 10 minutes under N2 atmosphere. The results shows that the adhesion properties can be enhanced and the resistivity has been improved from 6.0 μ,-cm, significantly decrease by 35%, of as-deposited Ag films by annealed. The thickness of Ag thin film is about 100 nm and the r. m. s roughness value is 1.54 nm. The a-Si:H TFT with Ag thin films as source and drain electrodes had a field effect mobility of 0.18 cm2/Vs, a threshold voltage of 2.65 V, and an on/off ratio of 3×104.

scholarly journals Enhancing the 3rd order nonlinear optical response of integrated micro-ring resonators with graphene oxide 2D films

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Pump Power ◽  
Nonlinear Optical ◽  
Kerr Nonlinearity ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Strong Light ◽  
Precise Control ◽  
Lift Off

Abstract Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1 − 5 layers of GO as well as the patterned devices with 10 − 50 layers of GO. The experimental results show good agreement with theory, achieving up to ~ 7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~ 10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

Enhanced optical four-wave-mixing in integrated ring resonators with graphene oxide films

2020 ◽  
Author(s):  
David Moss ◽  
Jiayang Wu ◽  
xingyuan xu ◽  
Yunyi Yang ◽  
linnan jia ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Pump Power ◽  
Kerr Nonlinearity ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Wave Mixing ◽  
Large Area ◽  
Strong Light ◽  
Lift Off

Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1−5 layers of GO as well as the patterned devices with 10−50 layers of GO. The experimental results show good agreement with theory, achieving up to ~7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique

2017 ◽  
Vol 75 ◽  
pp. 78-84 ◽  
Author(s):  
V.S. Bormashov ◽  
S.A. Terentiev ◽  
S.G. Buga ◽  
S.A. Tarelkin ◽  
A.P. Volkov ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Large Area ◽  
Lift Off

scholarly journals Large-Area Laser-Lift-Off Processing in Microelectronics

2013 ◽  
Vol 41 ◽  
pp. 241-248 ◽  
Author(s):  
R. Delmdahl ◽  
R. Pätzel ◽  
J. Brune
Keyword(s):  
Large Area ◽  
Lift Off
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