P-120: Low Voltage FLC for Fast Active Matrix Displays

2010 ◽  
Vol 41 (1) ◽  
pp. 1716 ◽  
Author(s):  
Alexander L. Andreev ◽  
Tatiana B. Andreeva ◽  
Igor N. Kompanets
Keyword(s):  
Low Voltage ◽  
Active Matrix ◽  
Active Matrix Displays

Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

Science ◽  
2011 ◽  
Vol 332 (6029) ◽  
pp. 570-573 ◽  
Author(s):  
M. A. McCarthy ◽  
B. Liu ◽  
E. P. Donoghue ◽  
I. Kravchenko ◽  
D. Y. Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Active Matrix ◽  
Light Emitting ◽  
Organic Light ◽  
Active Matrix Displays ◽  
Light Emitting Transistors

21.2: A Low-Voltage P-type Poly-Si Integrated Driving Circuits for Active Matrix Display

2005 ◽  
Vol 36 (1) ◽  
pp. 1046 ◽  
Author(s):  
Woo-Jin Nam ◽  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Hye-Jin Lee ◽  
Min-Koo Han
Keyword(s):  
Low Voltage ◽  
Active Matrix ◽  
P Type

Roll-up Active-matrix Displays

2006 ◽  
pp. 344-366
Author(s):  
H. Edzer A. Huitema ◽  
Gerwin H. Gelinck ◽  
Erik van Veenendaal ◽  
Fred J. Touwslager ◽  
Pieter J. G. van Lieshout
Keyword(s):  
Active Matrix ◽  
Active Matrix Displays

scholarly journals High-contrast top-emitting organic light-emitting devices for active-matrix displays

2005 ◽  
Vol 87 (14) ◽  
pp. 143507 ◽  
Author(s):  
Chih-Jen Yang ◽  
Chun-Liang Lin ◽  
Chung-Chih Wu ◽  
Yung-Hui Yeh ◽  
Chun-Cheng Cheng ◽  
...  
Keyword(s):  
High Contrast ◽  
Active Matrix ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Active Matrix Displays ◽  
Organic Light Emitting Devices

Properties of Oxide-Nitride-Oxide Stacked Films for Gate Insulation in Active Matrix Displays

1992 ◽  
Vol 284 ◽  
Author(s):  
D. Waechter ◽  
T. Billard ◽  
P. Gogna
Keyword(s):  
Tensile Stress ◽  
Single Layer ◽  
Chemical Vapor ◽  
Dielectric Strength ◽  
Index Of Refraction ◽  
Active Matrix ◽  
Hydrogen Incorporation ◽  
Active Matrix Displays ◽  
The Individual ◽  
Nitride Oxide

ABSTRACTOxide-nitride-oxide (ONO) stacked films deposited by plasma enhanced chemical vapor deposition (PECVD) have been studied for use as the gate dielectric in active matrix displays. Good electrical properties were obtained for cadmium selenide thin film transistors (TFTs) with either ONO or single layer SiO2 gate insulation. However, the dielectric strength was up to twice as large for the ONO films. This improvement was observed with both Al and Cr electrodes.The individual oxide layers had compressive stress, while the individual nitride layers had tensile stress. When combined in an ONO structure, a net tensile stress of relatively low magnitude was obtained. Index of refraction and infrared absorption measurements indicated that the oxide films were oxygen deficient. Hydrogen incorporation was present for both the oxide and nitride films.

Sign in / Sign up

Export Citation Format

Share Document