P-93: Characterizing Dielectric Tensors with Biaxial Ellipsometry

2008 ◽  
Vol 39 (1) ◽  
pp. 1533
Author(s):  
Paula K. Smith ◽  
Stephen C. McClain ◽  
Russell A. Chipman
Keyword(s):  
Dielectric Tensors

scholarly journals From anisotropy of dielectric tensors to birefringence: a quantum mechanics approach

2020 ◽  
Vol 31 (3) ◽  
pp. 835-851
Author(s):  
Michel Rérat ◽  
Philippe D’Arco ◽  
Valentina Lacivita ◽  
Fabien Pascale ◽  
Roberto Dovesi
Keyword(s):  
Quantum Mechanics ◽  
Dielectric Tensors

Excitation of whistler mode instability due to slow cyclotron interaction in an inhomogenous beam–plasma System

1984 ◽  
Vol 31 (2) ◽  
pp. 225-229 ◽  
Author(s):  
H. A. Shah ◽  
V. K. Jain
Keyword(s):  
Growth Rate ◽  
Inhomogeneous Plasma ◽  
Whistler Wave ◽  
Wave Instability ◽  
Mode Instability ◽  
Plasma System ◽  
Whistler Mode ◽  
Beam Plasma ◽  
Slow Cyclotron ◽  
Dielectric Tensors

The excitation of whistler wave instability due to slow cyclotron (m = – 1) interaction in an inhomogeneous plasma penetrated by an inhomogeneous beam of electrons is studied. Expressions are obtained for the elements of the plasma and beam dielectric tensors. It is shown that the inhomogeneity in both beam and plasma number densities affects the growth rate of the instability.

Generalized Ellipsometry Using a Rotating Sample

2001 ◽  
Vol 635 ◽  
Author(s):  
Weiliang Xu ◽  
Lowell T. Wood ◽  
Terry D. Golding
Keyword(s):  
Fourier Coefficients ◽  
Anisotropic Materials ◽  
Azimuth Angle ◽  
Sample Holder ◽  
Potential Applications ◽  
Dielectric Tensors ◽  
Anisotropic Nanostructures

AbstractWe propose a generalized ellipsometric technique using a rotating sample. The ellipsometer consists of a polarizer, a rotatable sample holder, an analyzer, and a detector. Fourier coefficients are measured and used to extract the system’s dielectric tensors and film thicknesses. The main advantage of the technique is that all parts of the ellipsometer are fixed except the sample, whose azimuth angle can be modulated. We show calculated responses to isotropic and anisotropic materials as well as superlattices. Potential applications for characterizations of anisotropic nanostructures are discussed.

Theoretical investigation of dielectric properties of rare earth stillwellite compounds

2015 ◽  
Vol 29 (21) ◽  
pp. 1550154
Author(s):  
R. Shaltaf ◽  
J. Khalifeh
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
High Frequency ◽  
Density Functional ◽  
Structural Parameters ◽  
The Other ◽  
Static Dielectric Permittivity ◽  
Dielectric Tensors

Ab initio density functional calculations are performed to investigate the dielectric properties of LnBSiO 5 (Ln = Ce, Pr, Nd) with the stillwellite structure. The calculated structural parameters are found to agree well with existing experimental results. The three compounds possess insulating electronic structure with nearly isotropic high frequency dielectric permittivity tensors. On the other hand, the static dielectric permittivity tensors are found to be less isotropic. The anisotropy of static dielectric tensors are found to increase as the atomic number of the lanthanide increases.

Electronic and Optical Properties of MoS2

2013 ◽  
Vol 209 ◽  
pp. 90-93 ◽  
Author(s):  
Ushma Ahuja ◽  
Alpa Dashora
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Density Functional ◽  
Full Potential ◽  
Absorption Coefficients ◽  
Plane Wave Method ◽  
Quantum Size ◽  
Dielectric Tensors ◽  
The Stability ◽  
Linearized Augmented Plane Wave

Electronic properties along with the absorption coefficients and dielectric tensors of MoS2 thin films in (0001) direction and the bulk state have been computed using density functional theory within full potential linearized augmented plane wave method. Surface energies and work functions are also deduced for different number of layers to check the quantum size effects and thereby the stability of thin films. The dielectric tensors and absorption coefficients (optical properties) of these materials are discussed to explore the utility of MoS2 in photovoltaic applications.

scholarly journals A Systematic Study of Compositionally Dependent Dielectric Tensors of SnSxSe1-x Alloys by Spectroscopic Ellipsometry

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 548
Author(s):  
Xuan Au Nguyen ◽  
Thi Minh Hai Nguyen ◽  
Tae Jung Kim ◽  
Long Van Le ◽  
Tung Hoang Nguyen ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Cleavage Plane ◽  
Optoelectronic Devices ◽  
Optical Data ◽  
Spectral Energy ◽  
Optical Responses ◽  
Second Derivatives ◽  
Principal Axes ◽  
Dielectric Tensors ◽  
Temperature Gradient Method

We report the dielectric tensors on the cleavage plane of biaxial SnSxSe1-x alloys in the spectral energy region from 0.74 to 6.42 eV obtained by spectroscopic ellipsometry. Single-crystal SnSxSe1-x alloys were grown by the temperature-gradient method. Strongly anisotropic optical responses are observed along the different principal axes. An approximate solution yields the anisotropic dielectric functions along the zigzag (a-axis) and armchair (b-axis) directions. The critical point (CP) energies of SnSxSe1-x alloys are obtained by analyzing numerically calculated second derivatives, and their physical origins are identified by energy band structure. Blue shifts of the CPs are observed with increasing S composition. The fundamental bandgap for Se = 0.8 and 1 in the armchair axis arises from band-to-band transitions at the M0 minimum point instead of the M1 saddle point as in SnS. These optical data will be useful for designing optoelectronic devices based on SnSxSe1-x alloys.

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