Uniform carbon-nanotube emitter for field-emission displays

2005 ◽  
Vol 13 (9) ◽  
pp. 727 ◽  
Author(s):  
Hiroyuki Kurachi ◽  
Sashiro Uemura ◽  
Jyunko Yotani ◽  
Takeshi Nagasako ◽  
Hiromu Yamada ◽  
...  
2006 ◽  
Vol 37 (6) ◽  
pp. 495-499 ◽  
Author(s):  
Fan-Guang Zeng ◽  
Chang-Chun Zhu ◽  
Weihua Liu ◽  
Xinghui Liu

2000 ◽  
Vol 31 (1) ◽  
pp. 324 ◽  
Author(s):  
W. B. Choi ◽  
N. S. Lee ◽  
W. K. Yi ◽  
Y. W. Jin ◽  
Y. S. Choi ◽  
...  

2004 ◽  
Vol 43 (6A) ◽  
pp. 3328-3334 ◽  
Author(s):  
Dan Nicolaescu ◽  
Lucian Dragos Filip ◽  
Seigo Kanemaru ◽  
Junji Itoh

2001 ◽  
Vol 2 (3) ◽  
pp. 48-53 ◽  
Author(s):  
J.H. You ◽  
C.G. Lee ◽  
J.E. Jung ◽  
Y.W. Jin ◽  
S.H. Jo ◽  
...  

2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Jin Ho Lee ◽  
...  

AbstractThe good field-emission properties of carbon nanotubes coupled with their high mechanical strength, chemical stability, and high aspect ratio, make them ideal candidates for the construction of efficient and inexpensive field-emission electronic devices. The fabrication process reported here has considerable potential for use in the development of integrated radio frequency amplifiers or field emission-controllable cold electron guns for field emission displays. This fabrication process is compatible with currently used semiconductor processing technologies. Micropatterned vertically aligned carbon nanotubes were grown on planar Si surface or inside the trenches, using chemical vapor deposition, photolithography, pulsed-laser deposition, reactive ion etching, and the lift-off method. To control the field-emission current by a 3rd electrode, the gate electrode, we grew carbon nanotubes inside the trenches. This triode-type structure is the best to realize the gray-scale carbon nanotube field emission. This carbon nanotube fabrication process can be widely applied for the development of electronic devices using carbon nanotube field emitters as cold cathodes and could revolutionize the area of field-emitting electronic devices such as RF amplifiers and field emission displays.


2000 ◽  
Vol 621 ◽  
Author(s):  
J. H. Kang ◽  
Y. S. Choi ◽  
W. B. Choi ◽  
N. S. Lee ◽  
Y. J. Park ◽  
...  

ABSTRACTA new structure of triode type field emission displays based on single-walled carbon nanotube emitters is demonstrated. In this structure, gate electrodes are situated under cathode electrodes with an in-between insulating layer, so called under-gate type triode. Electron emission from the carbon nanotube emitters is modulated by changing gate voltages. A threshold voltage is approximately 70 V at the anode bias of 275 V.


2000 ◽  
Vol 39 (Part 1, No. 12B) ◽  
pp. 7154-7158 ◽  
Author(s):  
Nae Sung Lee ◽  
Deuk Seok Chung ◽  
Jung Ho Kang ◽  
Hoon Young Kim ◽  
Sang Hyun Park ◽  
...  

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