Characterization of Liquid-Crystal Materials for Low-Voltage Operation TFT-TN and IPS LCDs concerning Ions contained

1998 ◽  
Vol 29 (1) ◽  
pp. 742 ◽  
Author(s):  
Y. Nakazono ◽  
T. Takagi ◽  
H. Ichinose ◽  
A. Sawada ◽  
S. Naemura ◽  
...  
2016 ◽  
Vol 55 (8) ◽  
pp. 4016-4025 ◽  
Author(s):  
Jacek Pecyna ◽  
Piotr Kaszyński ◽  
Bryan Ringstrand ◽  
Damian Pociecha ◽  
Serhii Pakhomov ◽  
...  

2019 ◽  
Vol 12 (1) ◽  
pp. 29-36
Author(s):  
Kazi Fatima Sharif ◽  
Satyendra N. Biswas

Abstract The fast evolution of battery functioned devices has caused approaches for decreasing power consumption in the memories is substantial. In this paper, a new proposal of SRAM with 8 transistors (8T) has been designed and also the cell itself is tested for its unique data overwriting and read propagation delays around 13.33% (read ‘1’) and 3.58% (read ‘0’) less compared to a conventional model. As the technology is attenuating, cell stability and increasing noise margin have become two crucial topics for the design metrics of SRAM, where our proposed cell appears with great stability on low voltage operation. Widespread simulation results authenticate the cogency and competency of the proposed 8T SRAM model using Cadence and 45nm predictive technology model (PTM).


2016 ◽  
Vol 55 (4S) ◽  
pp. 04EC15
Author(s):  
Yoshiteru Amemiya ◽  
Kazuki Noda ◽  
Takuma Sennichi ◽  
Shin Yokoyama

2012 ◽  
Vol 51 (8R) ◽  
pp. 084001
Author(s):  
Min-Gyeong Jo ◽  
Dong Han Song ◽  
Ji-Hoon Lee ◽  
Tae-Hoon Yoon

2019 ◽  
Vol 669 ◽  
pp. 364-370 ◽  
Author(s):  
I.R. Chávez-Urbiola ◽  
F.J. Willars-Rodríguez ◽  
R. Ramírez Bon ◽  
P. Vorobiev ◽  
Yu.V. Vorobiev

Sign in / Sign up

Export Citation Format

Share Document