40.1: Invited Paper: Active Matrix Low Temperature Poly-Si TFT / OLED Full Color Displays: Development Status

2000 ◽  
Vol 31 (1) ◽  
pp. 974 ◽  
Author(s):  
G. Rajeswaran ◽  
M. Itoh ◽  
M. Boroson ◽  
S. Barry ◽  
T. K. Hatwar ◽  
...  
Author(s):  
Masaya Tamaki ◽  
Sho Nakamitsu ◽  
Hiroaki Ito ◽  
Takanobu Suzuki ◽  
Masahiko Nishide ◽  
...  

Author(s):  
Masaya Tamaki ◽  
Sho Nakamitsu ◽  
Hiroaki Ito ◽  
Takanobu Suzuki ◽  
Masahiko Nishide ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Fumiya Osawa ◽  
Kazuhiro Marumoto

Abstract Spin-states and charge-trappings in blue organic light-emitting diodes (OLEDs) are important issues for developing high-device-performance application such as full-color displays and white illumination. However, they have not yet been completely clarified because of the lack of a study from a microscopic viewpoint. Here, we report operando electron spin resonance (ESR) spectroscopy to investigate the spin-states and charge-trappings in organic semiconductor materials used for blue OLEDs such as a blue light-emitting material 1-bis(2-naphthyl)anthracene (ADN) using metal–insulator–semiconductor (MIS) diodes, hole or electron only devices, and blue OLEDs from the microscopic viewpoint. We have clarified spin-states of electrically accumulated holes and electrons and their charge-trappings in the MIS diodes at the molecular level by directly observing their electrically-induced ESR signals; the spin-states are well reproduced by density functional theory. In contrast to a green light-emitting material, the ADN radical anions largely accumulate in the film, which will cause the large degradation of the molecule and devices. The result will give deeper understanding of blue OLEDs and be useful for developing high-performance and durable devices.


Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1327 ◽  
Author(s):  
Yu-Ming Huang ◽  
Konthoujam James Singh ◽  
An-Chen Liu ◽  
Chien-Chung Lin ◽  
Zhong Chen ◽  
...  

In terms of their use in displays, quantum dots (QDs) exhibit several advantages, including high illumination efficiency and color rendering, low-cost, and capacity for mass production. Furthermore, they are environmentally friendly. Excellent luminescence and charge transport properties of QDs led to their application in QD-based light-emitting diodes (LEDs), which have attracted considerable attention in display and solid-state lighting applications. In this review, we discuss the applications of QDs which are used on color conversion filter that exhibit high efficiency in white LEDs, full-color micro-LED devices, and liquid-type structure devices, among others. Furthermore, we discuss different QD printing processes and coating methods to achieve the full-color micro-LED. With the rise in popularity of wearable and see-through red, green, and blue (RGB) full-color displays, the flexible substrate is considered as a good potential candidate. The anisotropic conductive film method provides a small controllable linewidth of electrically conductive particles. Finally, we discuss the advanced application for flexible full-color and highly efficient QD micro-LEDs. The general conclusion of this study also involves the demand for a more straightforward QD deposition technique, whose breakthrough is expected.


2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.


2019 ◽  
Vol 50 (1) ◽  
pp. 454-456 ◽  
Author(s):  
Jack Fan ◽  
Chia-Yu. Lee ◽  
Shu-jhih Chen ◽  
Liu Ming Gang ◽  
Zhang Li Jun ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document