sP-91: Effect of UV-ozone Treatment as a Function of Time on the Surface Electronic Structure of Indium Tin Oxide

2003 ◽  
Vol 34 (1) ◽  
pp. 567
Author(s):  
Soo Young Kim ◽  
Jong-Lam Lee ◽  
Ki-Beom Kim ◽  
Yoon-Heung Tak
Keyword(s):  
Electronic Structure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ozone Treatment ◽  
Surface Electronic Structure ◽  
Uv Ozone

scholarly journals In Situ Measurements of Work Function of Indium Tin Oxide after UV/Ozone Treatment

2015 ◽  
Vol 56 (9) ◽  
pp. 1445-1447 ◽  
Author(s):  
Daisuke Yamashita ◽  
Atsushi Ishizaki ◽  
Tomoyuki Yamamoto
Keyword(s):  
Work Function ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ozone Treatment ◽  
Uv Ozone

scholarly journals The electronic structure of co-sputtered zinc indium tin oxide thin films

2011 ◽  
Vol 110 (7) ◽  
pp. 073711 ◽  
Author(s):  
Paz Carreras ◽  
Sebastian Gutmann ◽  
Aldrin Antony ◽  
Joan Bertomeu ◽  
Rudy Schlaf
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
Zinc Indium Tin Oxide

Electronic Structure of PbS Colloidal Quantum Dots on Indium Tin Oxide and Titanium Oxide

2014 ◽  
Vol 118 (48) ◽  
pp. 27884-27889 ◽  
Author(s):  
Tae Gun Kim ◽  
Hyekyoung Choi ◽  
Sohee Jeong ◽  
Jeong Won Kim
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Titanium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Colloidal Quantum Dots

Surface Electronic Structure of Nitric-oxide-treated Indium Tin Oxide

2003 ◽  
Vol 796 ◽  
Author(s):  
Hu Jianqiao ◽  
Pan Jisheng ◽  
Furong Zhu ◽  
Gong Hao
Keyword(s):  
Nitric Oxide ◽  
Binding Energy ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Surface Region ◽  
Valence Band Maximum ◽  
Surface Band ◽  
Band Bending ◽  
Surface Electronic Structure

ABSTRACTThe surface electronic properties of the nitric oxide (NO) treated indium tin oxide (ITO) are examined in-situ by a four-point probe and X-ray photoelectron spectroscopy (XPS). The XPS N1s peak emerged at a high binding energy of 404 eV indicating that NO is reactive with ITO. NO adsorption induces an increase of film sheet resistance, arising from an oxygen rich layer near the ITO surface region, with approximately 2.5 nm thick. This implies that the interaction of NO with ITO is occurred around surface region. Valence band maximum measured for NO-absorbed ITO was shifted to the low binding energy side. This is related to the upward surface band bending.

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