Derivation of the Fractional Dodson Equation and Beyond: Transient Diffusion With a Non-Singular Memory and Exponentially Fading-Out Diffusivity

2017 ◽  
Vol 3 (4) ◽  
pp. 255-270 ◽  
Author(s):  
Jordan Hristov
Keyword(s):  
Transient Diffusion ◽  
Singular Memory

Is it a Right Assumption That B and Ge are Distributed Randomly After Growing a Strained HBT-Structure?

2002 ◽  
Vol 716 ◽  
Author(s):  
Victor I. Kol'dyaev
Keyword(s):  
Surface Segregation ◽  
Initial Conditions ◽  
Initial Condition ◽  
Basic Assumptions ◽  
Transient Diffusion ◽  
Segregation Process ◽  
Main Observation

AbstractIt is accepted that surface Ge atoms are considered to be responsible for the surface B segregation process. A set of original experiments is carried out. A main observation from the B and Ge profiles grown at different conditions shows that at certain conditions B is taking initiative and determine the Ge surface segregation process. basic assumptions are suggested to self-consistently explain these original experimental features and what is observed in the literature. These results have a strong implication for modeling the B diffusion in Si1-xGex where the initial conditions should be formulated accounting for the correlation in B and Ge distribution. A new assumption for the initial condition to be “all B atoms are captured by Ge” is regarded as a right one implicating that there is no any transient diffusion representing the B capturing kinetics.

scholarly journals Singular memory or institutional memories? Toward a dynamic approach

Governance ◽  
2018 ◽  
Vol 31 (3) ◽  
pp. 555-573 ◽  
Author(s):  
Jack Corbett ◽  
Dennis C. Grube ◽  
Heather Lovell ◽  
Rodney Scott
Keyword(s):  
Dynamic Approach ◽  
Singular Memory

Two-Dimensional Numerical Analysis of Gas Diffusion-Induced Cassie to Wenzel State Transition

2021 ◽  
Author(s):  
Michael D. Mayer ◽  
Jonah Kadoko ◽  
Marc Hodes
Keyword(s):  
State Transition ◽  
Concentration Field ◽  
Gas Diffusion ◽  
Ideal Gas ◽  
Two Dimensional ◽  
Structured Surfaces ◽  
Wenzel State ◽  
Transient Diffusion ◽  
Collocation Spectral Method ◽  
Quiescent Liquid

Abstract We develop a two-dimensional model for the transient diffusion of gas from the cavities in ridge-type structured surfaces to a quiescent liquid suspended above them in the Cassie state to predict the location of the liquid vapor-interface (meniscus) as a function of time. The transient diffusion equation is numerically solved by a Chebyshev collocation (spectral) method coupled to the Young-Laplace equation and the ideal gas law. We capture the effects of variable meniscus curvature and, subsequently, when applicable, movement of triple contact lines. Results are presented for the evolution of the dissolved gas concentration field in the liquid and, when applicable, the time it takes for a meniscus to depin and that for longevity, i.e., the onset of the Cassie to Wenzel state transition. Two configurations are examined; viz., one where an impermeable membrane pressurizes the liquid above the ridges and one where hydrostatic pressure is considered and the top of the liquid is exposed to non-condensable gas.

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