scholarly journals Photoluminescence Properties of Indium-doped ZnO/Cu-graphene Thin Films Synthesized by Hydrothermal Method

2019 ◽  
Vol 31 (4) ◽  
pp. 1357
Author(s):  
Yuanyuan Fan ◽  
Taotao Ai ◽  
Wenhu Li ◽  
Zhifeng Deng ◽  
Xinqiang Yuan
2013 ◽  
Vol 13 (9) ◽  
pp. 6226-6230 ◽  
Author(s):  
Soaram Kim ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
Hyunsik Yoon ◽  
Min Su Kim ◽  
...  

2014 ◽  
Vol 30 (4) ◽  
pp. 538-542 ◽  
Author(s):  
Jihui Lang ◽  
Jiaying Wang ◽  
Qi Zhang ◽  
Songsong Xu ◽  
Qiang Han ◽  
...  

2018 ◽  
Vol 203 ◽  
pp. 222-229 ◽  
Author(s):  
L. Ouarez ◽  
A. Chelouche ◽  
T. Touam ◽  
R. Mahiou ◽  
D. Djouadi ◽  
...  

2010 ◽  
Vol 518 (20) ◽  
pp. 5687-5689 ◽  
Author(s):  
Xuan Fang ◽  
Jinhua Li ◽  
Dongxu Zhao ◽  
Binghui Li ◽  
Zhenzhong Zhang ◽  
...  

2005 ◽  
Vol 486-487 ◽  
pp. 21-24
Author(s):  
Hyun Ah Park ◽  
K. Prabakar ◽  
Yeon Chul Yoo ◽  
Sun Keun Hwang ◽  
Chong Mu Lee

Al doped ZnO (AZO) films were deposited on porous silicon (PS) substrates by a reactive rf-cosputtering process from two targets of ZnO and Al. The effect of ZnO target rf-sputtering power on the structural and photoluminescence (PL) properties of AZO/PS heterojunctions were studied. Strong monochromatic blue emission located at 2.78 eV was observed for the AZO films deposited at 150 W. Freshly prepared PS showed an emission band in the green spectral region. We show that deposition of AZO on PS does not degrade the skeleton of the PS and enhance the PL intensity. The PL band shifted to the high energy for AZO films deposited on PS and the intensity became stable.


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