scholarly journals Influence of Plasma Treatment on Physical Properties of Thin SnO2 Films Obtained from SnCl4 Solutions with Additions of NH4F and NH4OH

2019 ◽  
pp. 57 ◽  
Author(s):  
D.M. Mukhamedshina ◽  
A.I. Fedosimova ◽  
E.A. Dmitriyeva ◽  
I.A. Lebedev ◽  
E.A. Grushevskaya ◽  
...  
Keyword(s):  
Surface Resistance ◽  
Oxygen Vacancies ◽  
Oxygen Plasma ◽  
Tin Dioxide ◽  
Hydrogen Plasma ◽  
Ammonium Hydroxide ◽  
Film Material ◽  
Wave Region ◽  
Interaction Efficiency ◽  
Effect Of Oxygen

This paper considers the effect of oxygen and hydrogen plasma on SnO2 films synthesized from solutions of tin tetrachloride containing NH4F and NH4OH additives. It was found that the treatment of samples with oxygen plasma for 5 min led to a decrease in transparency by 1.11 and 1.17 times. On the transmission spectra, a decrease in the transmittance at a wavelength of 450 nm to 38.1% (1.24 times) in samples obtained from solutions with the addition of NH4F and up to 29.9% (1.53 times) in samples obtained from solutions with the addition of NH4OH is observed. The formation of tin oxide (II) under the influence of the reducing properties of hydrogen plasma is assumed. At the same time, the formation of metal tin from tin dioxide is not observed here. Due to the decreasing of transmission coefficient in the long-wave region of the spectrum. There is an increase in surface resistance after treatment with oxygen plasma, due to filling oxygen vacancies. Treatment of hydrogen plasma films leads to a decrease in surface resistance. Perhaps due to the increase in oxygen vacancies under the influence of hydrogen plasma. Within five minutes, the oxygen and hydrogen plasma had a more active effect on the films obtained from the solution with the addition of ammonium hydroxide, which is associated with a higher porosity of the sample. Consequently, irrespective of the time of plasma exposure with increasing the surface of contact between ionized gases and the film material, the interaction efficiency will increase.

scholarly journals Sensitivity to Ethanol Vapour of Thin Films SnO2 Doped with Fluorine

2019 ◽  
pp. 13 ◽  
Author(s):  
E.A. Grushevskaya ◽  
S.A. Ibraimova ◽  
E.A. Dmitriyeva ◽  
I.A. Lebedev ◽  
K.A. Mit’ ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Resistance ◽  
Tin Dioxide ◽  
Ammonium Hydroxide ◽  
Ammonium Fluoride ◽  
Charge Carriers ◽  
Ph Indicator ◽  
Ethanol Vapour ◽  
Film Forming ◽  
Fluorine Ions

Tin dioxide thin films were obtained by centrifuging. Annealing of samples was carried out in a muffle furnace at a temperature of 400 °C for 15 min, 3, 6 and 12 h. The surface resistance of the films was measured by four-force method. The sensitivity to ethanol vapour was determined by experimental setup that allows measurements in the range from room temperature to 300 °C. There is a change in the acidity of the solution with the addition of ammonium fluoride. To take into consideration this change in acidity, three batches of solutions were prepared: one example without additives, another one ‒ with the addition of ammonium fluoride and the last one ‒ with the addition of ammonium hydroxide. Films synthesized from a film-forming solution containing NH4F have less resistance than films obtained from solutions that do not contain ammonium fluoride. This confirms the presence of fluorine ions in the films as additional sources of free charge carriers. It is found that the pH-indicator of the film-forming solution does not affect the surface resistance of the synthesized SnO2 films. Annealing of fluoride doped films leads to an increase in surface resistance by two orders of magnitude, which is associated with the removal of fluorine from the films and the formation of a large number of defects. Further annealing leads to a decrease in surface resistance, which seems to be associated with a decrease in defects. It is shown that the change in the hydrogen index of the film-forming solution leads to the formation of films with a thermally stable sensitivity to ethanol vapour.

Effect of oxygen vacancies and crystal symmetry on piezocatalytic properties of Bi2WO6 ferroelectric nanosheets for wastewater decontamination

2021 ◽  
Author(s):  
Zihan Kang ◽  
Enzhu Lin ◽  
Ni Qin ◽  
Jiang Wu ◽  
Baowei Yuan ◽  
...  
Keyword(s):  
Organic Pollutants ◽  
Oxygen Vacancies ◽  
Mechanical Energy ◽  
Crystal Symmetry ◽  
Characteristic P ◽  
Novel Technique ◽  
Effect Of Oxygen

Piezocatalysis emerged as a novel technique to make use of mechanical energy in dealing with organic pollutants in wastewater. In this work, the ferroelectric Bi2WO6 (BWO) nanosheets with a characteristic...

A Red Long-Lasting Phosphorescence Material Gd9.33(SiO4)6O2:Sm3+and Effect of Oxygen Vacancies on Its Performance

2013 ◽  
Vol 2 (9) ◽  
pp. R161-R164 ◽  
Author(s):  
Gen Li ◽  
Yuhua Wang ◽  
Shaochun Han ◽  
Wei Zeng ◽  
Wenbo Chen ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Effect Of Oxygen

Electrical property effect of oxygen vacancies in the heterojunction of LaGaO 3 / SrTiO 3

2017 ◽  
Vol 26 (3) ◽  
pp. 037101
Author(s):  
Fu-Ning Wang ◽  
Ji-Chao Li ◽  
Xin-Miao Zhang ◽  
Han-Zhang Liu ◽  
Jian Liu ◽  
...  
Keyword(s):  
Electrical Property ◽  
Oxygen Vacancies ◽  
Effect Of Oxygen

The Effect of Oxygen Vacancies on the Dielectric Responses of BaTiO3 Based Ceramics in the Ultra-Wide Frequency Range

2011 ◽  
Vol 485 ◽  
pp. 15-18 ◽  
Author(s):  
Youn Kyu Choi ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Jong Min Oh ◽  
Takaaki Tsurumi
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Wide Frequency Range ◽  
Annealing Conditions ◽  
Mass Fractions ◽  
Xrd Patterns ◽  
Effect Of Oxygen ◽  
Lattice Hardening ◽  
Dipole Polarization ◽  
Ionic Polarization

The effect of oxygen vacancies and their migrations on the dielectric responses of BaTiO3 (BT) ceramics and (Ba, Ca)(Ti, Zr)O3 (BCTZ) ceramics was studied using wideband dielectric spectroscopy. Both dipole and ionic polarization of BT ceramics after annealing in a reducing atmosphere markedly decreased. To elucidate the decrease of dipole and ionic polarization, we observed the domain width and the crystal structure of BT ceramics annealed in different PO2. The mass fractions of constituted phases in 90o domain were calculated using the refinement of XRD patterns to explain the degradation of ionic polarization by oxygen vacancies. From the results above, we judged that the decrease of dipole polarization was due to the domain wall clamping by oxygen vacancies, while that of ionic polarization was attributable to the lattice hardening by the incorporation of oxygen vacancies into the BT lattice. In the case of BCTZ ceramics, dipole polarization showed the same way as BT ceramics with annealing conditions but the ionic polarization was independent of PO2 in annealing because of anti-reducing behavior of BCTZ ceramics. On the basis of the effect of oxygen vacancy in BT ceramics and BCTZ ceramics, we could clarify the oxygen vacancy migration in BCTZ ceramics under high direct-current voltage (DCV).

Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors

2011 ◽  
Vol 11 (11) ◽  
pp. 3031-3035 ◽  
Author(s):  
W. S. Shih ◽  
S. J. Young ◽  
L. W. Ji ◽  
W. Water ◽  
T. H. Meen ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen
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