Raman spectroscopy using deep UV (DUV) light excitation has been applied to
characterizing process-induced defects in surface layers in SiC. Raman spectra of P+-ion implanted
and post annealed SiC have been measured as a function of dose level and annealing temperature. The
recovery of the crystallinity and electrical activity have been evaluated. Precipitation of excess
phosphorus was found in heavily doped specimens. High dose implanted and post annealed samples
show uneven distribution of residual defects, which is demonstrated by mapping of Raman
bandwidth. Damage in 4H-SiC surfaces, which were mechanically polished with various sizes of
abrasives, has been evaluated from DUV micro-Raman measurements. The Raman analysis
demonstrates that bandwidth and peak frequency can be used as monitors of the polish–induced
damage. It is found that localized defects reducing free carrier density remain even after polishing
with small sized abrasives.
Morpho-molecular ex vivo detection and grading of non-muscle-invasive bladder cancer using forward imaging probe based multimodal optical coherence tomography and Raman spectroscopy