scholarly journals Stopping Distance for High Energy Jets in Weakly-Coupled Quark-Gluon Plasmas

2012 ◽  
Author(s):  
Wei Xiao
Keyword(s):  
High Energy ◽  
Stopping Distance ◽  
Weakly Coupled ◽  
Quark Gluon Plasmas

Lead-free BaTiO3–Bi(Zn2/3Nb1/3)O3 weakly coupled relaxor ferroelectric materials for energy storage

RSC Advances ◽  
2016 ◽  
Vol 6 (17) ◽  
pp. 14273-14282 ◽  
Author(s):  
Longwen Wu ◽  
Xiaohui Wang ◽  
Longtu Li
Keyword(s):  
Energy Efficiency ◽  
Energy Storage ◽  
Energy Density ◽  
High Energy ◽  
Ferroelectric Materials ◽  
Relaxor Ferroelectric ◽  
High Energy Density ◽  
Lead Free ◽  
Weakly Coupled ◽  
High Energy Efficiency

High energy density BaTiO3–Bi(Zn2/3Nb1/3)O3 materials with concurrently high energy efficiency.

Designing lead-free bismuth ferrite-based ceramics learning from relaxor ferroelectric behavior for simultaneous high energy density and efficiency under low electric field

2018 ◽  
Vol 6 (38) ◽  
pp. 10211-10217 ◽  
Author(s):  
Ningtao Liu ◽  
Ruihong Liang ◽  
Zhiyong Zhou ◽  
Xianlin Dong
Keyword(s):  
Energy Density ◽  
Electric Field ◽  
Bismuth Ferrite ◽  
High Energy ◽  
Relaxor Ferroelectric ◽  
High Energy Density ◽  
Lead Free ◽  
Ferroelectric Behavior ◽  
Weakly Coupled

The strategy of constructing weakly coupled polar structures is feasible and effective to boost the energy density and efficiency for bismuth ferrite-based bulk ceramics.

Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions

2013 ◽  
Vol 740-742 ◽  
pp. 625-628
Author(s):  
N. Chuchvaga ◽  
E. Bogdanova ◽  
A. Strelchuk ◽  
Evgenia V. Kalinina ◽  
D.B. Shustov ◽  
...  
Keyword(s):  
High Energy ◽  
Partial Recovery ◽  
Electrical Characteristics ◽  
Stopping Distance ◽  
Wide Range ◽  
Order Of Magnitude ◽  
Radiation Induced ◽  
Temperature Radiation ◽  
Induced Defects ◽  
Partial Annealing

A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions (167 MeV) in wide range fluencies 4x109 –1x1011 cm-2 at temperatures 250C and 5000C are presented. After irradiation these samples were thermal annealed at 5000C for 30 min. Far-action effect at a depth of more than one order of magnitude of stopping distance was observed under Xe ions irradiation in 4H-SiC. An increase of the ion Xe fluencies increased the concentration of radiation-induced defects that resulted in rise of the compensation effect of conductivity in samples. Irradiation of 4H-SiC by Xe ions at 5000C was accompanied with "dynamic annealing" some low-temperature radiation-induced defects, which led to a partial recovery of the electrical characteristics of devices. The thermal annealing of irradiated samples led to additional partial annealing of radiation defects, which increases the radiation resource of devices based on 4H-SiC.

Weakly coupled relaxor behavior of BaTiO3-Bi(Mg1/2Ti1/2)O3 lead-free ceramics

2013 ◽  
Vol 03 (01) ◽  
pp. 1320001 ◽  
Author(s):  
Qiang Zhang ◽  
Zhenrong Li
Keyword(s):  
Energy Density ◽  
Hysteresis Loops ◽  
High Energy ◽  
High Energy Density ◽  
Relaxor Behavior ◽  
Dielectric Measurements ◽  
Low Loss ◽  
Weakly Coupled ◽  
Lead Free Ceramics ◽  
Tan Δ

(1-x) BaTiO 3-x Bi ( Mg 1/2 Ti 1/2) O 3 (BT-BMT, 0.3 ≤ x ≤ 0.6) ceramics were prepared by the conventional mixed oxide method. Dielectric measurements showed highly diffusive and dispersive relaxor-like characteristics for all compositions. For 0.3 ≤ x ≤ 0.4, all these compositions possess a stable dielectric permittivity of approximately 1500 and low loss tangent (tan δ < 2%) in the temperature range 200–400°C, which may have great potential for high-temperature applications. For all samples, examination of the polarization hysteresis behavior shows an obvious linear hysteresis loops at 120°C. It was found that the energy density of about 0.7 J/cm3 could be achieved at 120°C for x = 0.4 sample, indicating a high energy density.

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