scholarly journals Understanding thin film formation through molecular beam epitaxy studies of atomic-level interactions in order to link deposition process conditions to device performance in 2 materials : MgO and Cs3Sb

2018 ◽  
Author(s):  
Celestin
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Formation ◽  
Deposition Process ◽  
Atomic Level ◽  
Process Conditions ◽  
Device Performance ◽  
Thin Film Formation

Progress in thin film formation by laser assisted molecular beam deposition (LAMBD)

1998 ◽  
Vol 127-129 ◽  
pp. 321-329 ◽  
Author(s):  
Robert L. DeLeon ◽  
Mukesh P. Joshi ◽  
Eric F. Rexer ◽  
Paras N. Prasad ◽  
James F. Garvey
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Film Formation ◽  
Molecular Beam Deposition ◽  
Thin Film Formation ◽  
Beam Deposition

Molecular Beam Epitaxy: Thin Film Growth and Surface Studies

MRS Bulletin ◽  
1988 ◽  
Vol 13 (11) ◽  
pp. 29-36 ◽  
Author(s):  
Theodore D. Moustakas
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Ultrahigh Vacuum ◽  
Physical Method ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Gaas Films

Molecular Beam Epitaxy (MBE) is a thin film deposition process in which thermal beams of atoms or molecules react on the clean surface of a single-crystalline substrate, held at high temperatures under ultrahigh vacuum conditions, to form an epitaxial film. Thus, contrary to the CVD processes described in the other articles, the MBE process is a physical method of thin film deposition.The vacuum requirements for the MBE process are typically better than 10−10torr. This makes it possible to grow epitaxial films with high purity and excellent crystal quality at relatively low substrate temperatures. Additionally, the ultrahigh vacuum environment allows the study of surface, interface, and bulk properties of the growing film in real time, by employing a variety of structural and analytical probes.Although the MBE deposition process was first proposed by Günther in 1958, its implementation had to wait for the development of the ultrahigh vacuum technology. In 1968 Davey and Pankey successfully grew epitaxial GaAs films by the MBE process. At the same time Arthur's work on the kinetics of GaAs growth laid the groundwork for the growth of high quality MBE films of GaAs and other III-V compounds by Arthur and LePore and Cho.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

scholarly journals Growth of Gaseous Macromolecules in the Downstream Region of Perfluorocompounds Plasmas-Observation, Reaction Mechanism, Thin Film Formation-

Shinku ◽  
2006 ◽  
Vol 49 (3) ◽  
pp. 195-197
Author(s):  
Kenji FURUYA ◽  
Shinobu YUKITA ◽  
Hiroshi OKUMURA ◽  
Ryoichi NAKANISHI ◽  
Makoto MAKITA ◽  
...  
Keyword(s):  
Thin Film ◽  
Reaction Mechanism ◽  
Film Formation ◽  
Downstream Region ◽  
Thin Film Formation

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Giant magnetostrictive thin film formation by plasma process

2003 ◽  
Vol 169-170 ◽  
pp. 613-615 ◽  
Author(s):  
T. Yamaki ◽  
M. Sekine ◽  
T. Haraki ◽  
H. Uchida ◽  
Y. Matsumura
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Plasma Process ◽  
Thin Film Formation
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