Investigations of photophysical and photochemical processes in heme proteins through ultrafast laser spectroscopy and low-temperature absorption spectroscopy

2000 ◽  
Author(s):  
Wei Wang
Keyword(s):  
Low Temperature ◽  
Laser Spectroscopy ◽  
Absorption Spectroscopy ◽  
Heme Proteins ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Photochemical Processes

The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

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