Photoconductive Semiconductor-Based Optoelectronic Devices for Generation of Terahertz Radiation
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We report on the development and fabrication of a superlattice-based InAlAs/InGaAs heterostructure featuring an ultrashort photocarrier lifetime which has been used as a material base for a photoconductive antenna (PCA)-emitter with a frequency bandwidth of 10 GHz — 3.0 THz and dynamic range above 60 dB. We show an efficiency of plasmonic electrodes embedded into the 10 μm PCA’s gap demonstrating the enhancement of the emitted THz power up to 10 μW (at bias voltage 20—30 V and average pump power 10 mW). The results could open a pathway towards the development of the Russian THz spectroscopic and imaging systems.
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2011 ◽
Vol 276
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pp. 012208
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