scholarly journals Various regimes of charge transfer in a Holstein chain in a constant electric field depending on its intensity and the initial charge distribution

2018 ◽  
Author(s):  
A.N. Korshunova ◽  
V.D. Lakhno
Keyword(s):  
Charge Transfer ◽  
Electric Field ◽  
Charge Distribution ◽  
Constant Electric Field ◽  
Initial Charge

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

scholarly journals An In-Situ Reaction Route to Molecular Level Dispersed Bisimide and ZnO Nanorod Hybrids with Efficient Photo-Induced Charge Transfer

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Chunzheng Lv ◽  
Lirong He ◽  
Jiahong Tang ◽  
Feng Yang ◽  
Chuhong Zhang
Keyword(s):  
Charge Transfer ◽  
Electric Field ◽  
Self Assembly ◽  
Molecular Level ◽  
Surface Photovoltage ◽  
Zno Nanorod ◽  
In Situ Reaction ◽  
Perylene Bisimide ◽  
Induced Charge

AbstractAs an important photoconductive hybrid material, perylene/ZnO has attracted tremendous attention for photovoltaic-related applications, but generally faces a great challenge to design molecular level dispersed perylenes/ZnO nanohybrids due to easy phase separation between perylenes and ZnO nanocrystals. In this work, we reported an in-situ reaction method to prepare molecular level dispersed H-aggregates of perylene bisimide/ZnO nanorod hybrids. Surface photovoltage and electric field-induced surface photovoltage spectrum show that the photovoltage intensities of nanorod hybrids increased dramatically for 100 times compared with that of pristine perylene bisimide. The enhancement of photovoltage intensities resulting from two aspects: (1) the photo-generated electrons transfer from perylene bisimide to ZnO nanorod due to the electric field formed on the interface of perylene bisimide/ZnO; (2) the H-aggregates of perylene bisimide in ZnO nanorod composites, which is beneficial for photo-generated charge separation and transportation. The introduction of ordered self-assembly thiol-functionalized perylene-3,4,9,10-tetracarboxylic diimide (T-PTCDI)/ ZnO nanorod composites induces a significant improvement in incident photo-to-electron conversion efficiency. This work provides a novel mentality to boost photo-induced charge transfer efficiency, which brings new inspiration for the preparation of the highly efficient solar cell.

scholarly journals Interfacial chemical bond and internal electric field modulated Z-scheme Sv-ZnIn2S4/MoSe2 photocatalyst for efficient hydrogen evolution

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuehua Wang ◽  
Xianghu Wang ◽  
Jianfeng Huang ◽  
Shaoxiang Li ◽  
Alan Meng ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Electric Field ◽  
Hydrogen Evolution ◽  
Density Functional ◽  
Monochromatic Light ◽  
Density Functional Theory Calculations ◽  
Internal Electric Field ◽  
Apparent Quantum Yield ◽  
Paramagnetic Resonance ◽  
High Hydrogen

AbstractConstruction of Z-scheme heterostructure is of great significance for realizing efficient photocatalytic water splitting. However, the conscious modulation of Z-scheme charge transfer is still a great challenge. Herein, interfacial Mo-S bond and internal electric field modulated Z-scheme heterostructure composed by sulfur vacancies-rich ZnIn2S4 and MoSe2 was rationally fabricated for efficient photocatalytic hydrogen evolution. Systematic investigations reveal that Mo-S bond and internal electric field induce the Z-scheme charge transfer mechanism as confirmed by the surface photovoltage spectra, DMPO spin-trapping electron paramagnetic resonance spectra and density functional theory calculations. Under the intense synergy among the Mo-S bond, internal electric field and S-vacancies, the optimized photocatalyst exhibits high hydrogen evolution rate of 63.21 mmol∙g−1·h−1 with an apparent quantum yield of 76.48% at 420 nm monochromatic light, which is about 18.8-fold of the pristine ZIS. This work affords a useful inspiration on consciously modulating Z-scheme charge transfer by atomic-level interface control and internal electric field to signally promote the photocatalytic performance.

scholarly journals Restraining Surface Charge Accumulation and Enhancing Surface Flashover Voltage through Dielectric Coating

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 750
Author(s):  
Jixing Sun ◽  
Sibo Song ◽  
Xiyu Li ◽  
Yunlong Lv ◽  
Jiayi Ren ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Electric Field ◽  
Electric Fields ◽  
Transition Process ◽  
Metallic Particle ◽  
Particle Charging ◽  
Insulating Surfaces ◽  
Surface Flashover ◽  
Charging Time ◽  
The Impact

A conductive metallic particle in a gas-insulated metal-enclosed system can charge through conduction or induction and move between electrodes or on insulating surfaces, which may lead to breakdown and flashover. The charge on the metallic particle and the charging time vary depending on the spatial electric field intensity, the particle shape, and the electrode surface coating. The charged metallic particle can move between the electrodes under the influence of the spatial electric field, and it can discharge and become electrically conductive when colliding with the electrodes, thus changing its charge. This process and its factors are mainly affected by the coating condition of the colliding electrode. In addition, the interface characteristics affect the particle when it is near the insulator. The charge transition process also changes due to the electric field strength and the particle charging state. This paper explores the impact of the coating material on particle charging characteristics, movement, and discharge. Particle charging, movement, and charge transfer in DC, AC, and superimposed electric fields are summarized. Furthermore, the effects of conductive particles on discharge characteristics are compared between coated and bare electrodes. The reviewed studies demonstrate that the coating can effectively reduce particle charge and thus the probability of discharge. The presented research results can provide theoretical support and data for studying charge transfer theory and design optimization in a gas-insulated system.

scholarly journals Phonon residual resistance of pure crystals

2015 ◽  
Vol 29 (29) ◽  
pp. 1550206
Author(s):  
A. I. Agafonov
Keyword(s):  
Electric Field ◽  
Constant Electric Field ◽  
Finite Thickness ◽  
Mean Free Path ◽  
Residual Resistivity ◽  
Boltzmann Transport ◽  
Residual Resistance ◽  
Temperature Resistance ◽  
Electron Mean Free Path ◽  
The Ideal

In this paper, using the Boltzmann transport equation, we study the zero temperature resistance of perfect metallic crystals of a finite thickness d along which a weak constant electric field E is applied. This resistance, hereinafter referred to as the phonon residual resistance, is caused by the inelastic scattering of electrons heated by the electric field, with emission of long-wave acoustic phonons and is proportional to [Formula: see text]. Consideration is carried out for Cu, Ag and Au perfect crystals with the thickness of about 1 cm, in the fields of the order of 1 mV/cm. Following the Matthiessen rule, the resistance of the pure crystals, the thicknesses of which are much larger than the electron mean free path is represented as the sum of both the impurity and phonon residual resistances. The condition on the thickness and field is found at which the low-temperature resistance of pure crystals does not depend on their purity and is determined by the phonon residual resistivity of the ideal crystals. The calculations are performed for Cu with a purity of at least 99.9999%.

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