scholarly journals Bright Field Image Capture with Zeiss AxioImager v1 (protocols.io.bcsgiwbw)

protocols.io ◽  
2020 ◽  
Author(s):  
Allen Institute
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.


Author(s):  
J. Y. Koo ◽  
G. Thomas

High resolution electron microscopy has been shown to give new information on defects(1) and phase transformations in solids (2,3). In a continuing program of lattice fringe imaging of alloys, we have applied this technique to the martensitic transformation in steels in order to characterize the atomic environments near twin, lath and αmartensite boundaries. This paper describes current progress in this program.Figures A and B show lattice image and conventional bright field image of the same area of a duplex Fe/2Si/0.1C steel described elsewhere(4). The microstructure consists of internally twinned martensite (M) embedded in a ferrite matrix (F). Use of the 2-beam tilted illumination technique incorporating a twin reflection produced {110} fringes across the microtwins.


Author(s):  
R. Hegerl ◽  
A. Feltynowski ◽  
B. Grill

Till now correlation functions have been used in electron microscopy for two purposes: a) to find the common origin of two micrographs representing the same object, b) to check the optical parameters e. g. the focus. There is a third possibility of application, if all optical parameters are constant during a series of exposures. In this case all differences between the micrographs can only be caused by different noise distributions and by modifications of the object induced by radiation.Because of the electron noise, a discrete bright field image can be considered as a stochastic series Pm,where i denotes the number of the image and m (m = 1,.., M) the image element. Assuming a stable object, the expectation value of Pm would be Ηm for all images. The electron noise can be introduced by addition of stationary, mutual independent random variables nm with zero expectation and the variance. It is possible to treat the modifications of the object as a noise, too.


Author(s):  
K. Shiraishi ◽  
T. Katsuta ◽  
S. Ozasa ◽  
H. Todokoro

We have recently completed a newly designed 650KV electron microscope. An external view of this advanced instrument is shown in Figure 1. A symmetrical Cockcroft-Walton circuit has been adopted as the high voltage generator. The cathode is heated by high frequency power; a battery is not employed. The high voltage stability is better than 1 x 10-5/min.The sectional diagram of the column shown in Figure 2 is 420mm in diameter and 2750mm in height. The illuminating system consists of a double condenser lens and a magnetic alignment device. Dual deflector assemblies for dark and bright field images, selectable by push button, are built beneath the condenser lens. Two selectable stigmator power supplies are also provided for dark and bright field image operation.


1990 ◽  
Vol 258 (2) ◽  
pp. H574-H586 ◽  
Author(s):  
H. A. Spurgeon ◽  
M. D. Stern ◽  
G. Baartz ◽  
S. Raffaeli ◽  
R. G. Hansford ◽  
...  

A system is described that can simultaneously record cytosolic Ca2+ concentration ([Ca2+]i), cell length, and either membrane potential or current in single cardiac myocytes loaded with the fluorescent Ca2+ indicator indo-1. Fluorescence is excited by epi-illumination with 3.8-microsecond flashes of 350 +/- 5 nm light from a xenon arc. Indo-1 fluoresence is measured simultaneously in spectral windows of 391-434 nm and 457-507 nm, and the ratio of indo-1 emission in the two bands is computed as a measure of [Ca2+]i for each flash. With cells loaded with the permeant acetoxymethyl ester of indo-1, quantitation of [Ca2+]i is not precise, owing to subcellular compartmentation of indo-1; however, the instrument would allow full quantitation if indo-1 free acid was introduced by microinjection. Simultaneously, cell length is measured on-line from the bright-field image of the cell. Because fluorescence collection is time gated during the brief flash, and red light (650-750 nm) is used for the bright-field image, cell length and [Ca2+]i measurements are obtained simultaneously without cross talk. Membrane potential or current can be recorded simultaneously with indo-1 fluorescence and cell length via standard patch-clamping techniques.


Author(s):  
R. Osiecki ◽  
G. Thomas

Some results of up to 12 beam contrast calculations for systematic orientations have indicated that high order reflections at high voltages may provide improved dislocation resolution. For example the contrast profiles for dislocations show a decrease in image width for increasing order of reflection (i.e. increasing ḡ·), thus enabling improved resolution of narrow dislocation dissociations and closely spaced dipoles or superdislocations.This paper provides experimental confirmation that high order systematic reflections do indeed result in an improvement in bright field image resolution, e.g. image widths of dislocations can be reduced by a factor of ~3. The results have been obtained from [001] foils of GaAs semiconducting devices in which dislocations are associated with surface and interfacial defects. In each case the crystal is set at the exact Bragg condition for each reflection along the systematic row being used. The work was done on the Berkeley Hitachi microscope operated at 650 kV.


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