scholarly journals Influence of Bath Temperature on Structural, Optical and Electrical Properties of Cadmium Sulfi de Thin Films Prepared by Chemical Bath Deposition

Author(s):  
Mikhail V. Gapanovich ◽  
Natalia A. Tikhonina ◽  
Tatiana S. Kokovina ◽  
Dmitry N. Varseev ◽  
Vladimir V. Rakitin ◽  
...  

Abstract. The effect of bath temperature (60-90 °C) on structural, optical and electrical propertiesof CdS thin films deposited by chemical bath deposition (CBD) at a constant precursorconcentration and deposition time was studied. From the XRD analysis, it was found that thestructure of CdS thin fi lms varied with temperature. At lower temperature hexagonal structurewas dominated while at high temperature, the cubic structure was prominent. The band gap ofthe as-prepared CdS thin fi lms was calculated from the UV-Vis spectroscopic data, and it wasfound to be decreased with the increase of temperature. The resistivity of the CdS thin fi lms alsodecreased with the increase in temperature.       REFERENCES1. Kumar S., Sharma P., Sharma V. CdS nanofi lms: effect of deposition temperature on morphology andoptical band gap. Physica Scripta, 2013, v. 88(4), p. 045603. DOI: https://doi.org/10.1088/0031-8949/88/04/0456032. Rondiyaa S., Rokadea A., Gabhalea B., Pandharkara S., Chaudharia M., Dateb A., et al. Effectof bath temperature on optical and morphology properties of CdS thin fi lms grown by chemical bathdeposition. Energy Procedia, 2017, v. 110, pp. 202–209. DOI: https://doi.org/10.1016/j.egypro.2017.03.1283. Fangyang Liu, Yanqing Lai, Jun Liu, Bo Wang, Sanshuang Kuang, Zhian Zhang, et al. Characterizationof chemical bath deposited CdS thin fi lms at different deposition temperature. J. Alloys Compd., 2010,v. 493(1–2), pp. 305–308. DOI: https://doi.org/10.1016/j.jallcom.2009.12.0884. Hariech S., Aida M. S., Bougdira J., Belmahi M., Medjahdi G., Genиve D., et al. Cadmium sulfi de thinfi lms growth by chemical bath deposition. J. Semicond., 2018, v. 39(3), p. 034004. DOI: https://doi.org/10.1088/1674-4926/39/3/0340045. Mane R. S., Lokhande C. D. Chemical deposition method for metal chalcogenide thin fi lms. J. Mater.Chem. Phys., 2000, v. 65(1), p. 1–31. DOI: https://doi.org/10.1016/s0254-0584(00)00217-06. Hodes G. Chemical solution deposition of semiconductor fi lms. Monograph, Boca Raton, CRCPress, 2002, 388 p. DOI: https://doi.org/10.1201/97802039090967. George P. J., Sanchez-Juarez A., Nair P. K. Modifi cation of electrical, optical and crystalline propertiesof chemically deposited CdS fi lms by thermal diffusion of indium and tin. Semicond. Sci. Technol., 1996, v.11(7), pp. 1090–1095. DOI: https://doi.org/10.1088/0268-1242/11/7/0218. Oliva A. I., Solis-Canto O., Castro-Rodriguez R., Quintana P. Formation of the band gap energy on CdSthin fi lms growth by two different techniques Thin Solid Films, 2001, v. 391(1), pp. 28–35. DOI: https://doi.org/10.1016/s0040-6090(01)00830-69. Lejmi N., Savadogo O. The effect of heteropolyacids and isopolyacids on the properties ofchemically bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2001, v. 70(1), pp. 71–83. DOI: https://doi.org/10.1016/s0927-0248(00)00412-810. Gray D.E. American Institute of Physics Handbook. 3rd Edition, McGraw-Hill, New York, pp. 4–58.11. Ravi Kant Choubey, Dipti Desai, Kale S. N., Sunil Kumar. Effect of annealing treatment anddeposition temperature on CdS thin fi lms for CIGS solar cells applications. J. Mater. Sci: Mater. in Elec.,2016, v. 27(8), pp. 7890–7898. DOI: https://doi.org/10.1007/s10854-016-4780-212. Lo Y. S., Choubey R. K., Yu W. C., Hsu W. T., Lan C. W. Shallow bath chemical deposition of CdSthin fi lm. Thin Solid Films, 2011, v. 520(1), pp. 217-223. DOI: https://doi.org/10.1016/j.tsf.2011.07.03513. Cortes A., Gomez H., Marotti R. E., Riveros G., Dalchiele E. A. Grain size dependence of the bandgapin chemical bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2004, v. 82(1-2), pp. 21–34. DOI:https://doi.org/10.1016/j.solmat.2004.01.002 14. Ahmad F. R., Yakimov A., Davis R. J., Her J. H., Cournoyer J. R., Ayensu N. M. Effect of thermal annealingon the properties of cadmium sulfi de deposited via chemical bath deposition. Thin Solid Films, 2013,v. 535, pp. 166–170. DOI: https://doi.org/10.1016/j.tsf.2012.10.08515. Rakhshani A. E., Al-Azab A. S. Characterization of CdS fi lms prepared by chemical-bath deposition.J. Phys. Condens. Matter., 2000, v. 12, pp. 8745–8756. DOI: https://doi.org/10.1088/0953-8984/12/40/31616. Al Kuhaimi S. A. // Vacuum, 1998, v. 51, pp. 349–55.17. Zelaya-Angel O., Alvarado-Gil J. J., Lozada-Morales R., Vargas H., Ferreira da Silva A. Band-gapshift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition.Appl. Phys. Lett., 1994, v. 64(3), pp. 291–293. DOI: https://doi.org/10.1063/1.11118418. Chopra K. L. Thin Film Phenomena. McGraw-Hill, New York, 1969, 266 p.19. Pattabi M., Uchil J. Synthesis of cadmium sulphide nanoparticles. Sol. Energy Mater. Sol. Cells, 2000,v. 63(4), pp. 309–314. DOI: https://doi.org/10.1016/s0927-0248(00)00050-720. Hani Khallaf, Isaiah O. Oladeji, Guangyu Chai, Lee Chow. Characterization of CdS thin fi lms grown bychemical bath deposition using four different cadmium sources. Thin Solid Films, 2008, v. 516(21), pp. 7306–7312. DOI: https://doi.org/10.1016/j.tsf.2008.01.00421. Sasikala G., Thilakan P., Subramanian C. Modifi cation in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin fi lms for photovoltaic applications. Sol. Ener gyMater. Sol. Cells, 2000, v. 62(3), pp. 275–293. DOI: https://doi.org/10.1016/s0927-0248(99)00170-122. Toma A., Vigil O., Alvarado-Gil J. J., Lozada-Morales R., Zelaya-Angel O., Vargas H., et al. Infl uenceof thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin fi lms. J. Appl.Phys., 1995, v. 78(4), p. 2204–2207. DOI: https://doi.org/10.1063/1.360136

2006 ◽  
Vol 252 (15) ◽  
pp. 5602-5606 ◽  
Author(s):  
J.J. Kim ◽  
E. Ikenaga ◽  
M. Kobata ◽  
A. Takeuchi ◽  
M. Awaji ◽  
...  

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Gedi Sreedevi ◽  
Kotte Tulasi Ramakrishna Reddy

Tin monosulphide (SnS) films have been successfully grown by a simple and low-cost wet chemical process, chemical bath deposition (CBD), using tin chloride and thioacetamide as precursors and tartaric acid as complexing agent. The layers were grown on glass substrate at different bath temperatures (Tb) that varied in the range 50–70°C. The energy dispersive X-ray analysis (EDAX) studies showed that all the grown films were nearly stoichiometric. The X-ray diffraction analysis indicated that the films had an intense peak at 31.6° that corresponds to the (111) plane of SnS and exhibited orthorhombic crystal structure. The intensity of (111) plane increases with the increase in bath temperature and became sharp at Tb=70°C, where the other crystal planes got suppressed, this indicates better crystallinity of the layers grown at this temperature. No other secondary phases of tin sulphide were observed. The structural parameters such as lattice constants and crystallite size were also calculated. The optical studies revealed that the layers had high optical absorption coefficient (>104 cm−1). The energy band gap was found to be allowed and direct and varied between 1.30 eV and 1.35 eV. The band gap decreased with the rise in bath temperature. The refractive index and the extinction coefficient were also evaluated. The details of these results will be presented and discussed.


2009 ◽  
Vol 517 (15) ◽  
pp. 4491 ◽  
Author(s):  
A.M.C. Ng ◽  
K.Y. Cheung ◽  
M.K. Fung ◽  
A.B. Djurišić ◽  
W.K. Chan

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