scholarly journals Molecular dynamics simulation of Ti-6AL-4V diffusion bonding behavior under different process parameters

2020 ◽  
Vol 54 (3) ◽  
pp. 365-372
Author(s):  
X. Liu ◽  
L. Xu ◽  
S. Zhang
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Process Parameters ◽  
Diffusion Bonding ◽  
Dynamics Simulation

Molecular dynamics simulation of diffusion bonding of Al–Cu interface

2014 ◽  
Vol 22 (6) ◽  
pp. 065013 ◽  
Author(s):  
Chang Li ◽  
Dongxu Li ◽  
Xiaoma Tao ◽  
Hongmei Chen ◽  
Yifang Ouyang
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Diffusion Bonding ◽  
Dynamics Simulation

scholarly journals A Study on Sputtering of Copper Seed Layer for Interconnect Metallization via Molecular Dynamics Simulation

2021 ◽  
Vol 11 (20) ◽  
pp. 9702
Author(s):  
Cheng-Hsuan Ho ◽  
Cha’o-Kuang Chen ◽  
Chieh-Li Chen
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Process Parameters ◽  
Seed Layer ◽  
Incident Energy ◽  
Incident Angle ◽  
Dynamics Simulation ◽  
Copper Seed Layer

Interconnects are significant elements in integrated circuits (ICs), as they connect individual components of the circuit into a functioning whole. To form a void-free interconnect, a thin and uniform copper seed layer must be deposited as a basis for electroplating. In this paper, process parameters of sputtering including incident energy, incident angle, substrate temperature, and deposition rate were studied to form a uniform copper seed layer. Different liner/barrier materials and properties including crystal planes were also studied to enhance the quality of the copper seed layer. The study was carried out by molecular dynamics simulation. It revealed that increasing the incident energy and substrate temperature during the sputtering process increases their diffusivity but results in poorer uniformity and larger alloy percentage. By decreasing the deposition rate, the Ostwald ripening effect becomes dominant and increases the uniformity. An adequate incident angle could increase necking and uniformity. Among the sputtering process parameters and material properties discussed in this study, surface diffusion barrier energy of different crystal planes is the most decisive factor, which leads to good uniformity.

[P73] Molecular dynamics simulation of diffusion bonding of Al-Cu interface

Calphad ◽  
2015 ◽  
Vol 51 ◽  
pp. 396-397
Author(s):  
Chang Li ◽  
Dongxu Li ◽  
Xiaoma Tao ◽  
Hongmei Chen ◽  
Yifang Ouyang
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Diffusion Bonding ◽  
Dynamics Simulation
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