scholarly journals Relationships between the growth direction of primary roots and yield in rice plants.

1986 ◽  
Vol 55 (4) ◽  
pp. 520-525 ◽  
Author(s):  
Shigenori MORITA ◽  
Akira IWABUCHI ◽  
Koou YAMAZAKI
Keyword(s):  
Growth Direction ◽  
Rice Plants ◽  
Primary Roots

scholarly journals Relationships between the growth direction of primary roots and shoot growth in rice plants.

1987 ◽  
Vol 56 (4) ◽  
pp. 530-535 ◽  
Author(s):  
Shigenori MORITA ◽  
Akira IWABUCHI ◽  
Koou YAMAZAKI
Keyword(s):  
Shoot Growth ◽  
Growth Direction ◽  
Rice Plants ◽  
Primary Roots

scholarly journals A Method for Measuring Bleeding Rates of Primary Roots in Rice Plants

1988 ◽  
Vol 57 (1) ◽  
pp. 246-247
Author(s):  
Koou YAMAZAKI ◽  
Jun ABE
Keyword(s):  
Rice Plants ◽  
Primary Roots

scholarly journals Salt Modulates Gravity Signaling Pathway to Regulate Growth Direction of Primary Roots in Arabidopsis

2007 ◽  
Vol 146 (1) ◽  
pp. 178-188 ◽  
Author(s):  
Feifei Sun ◽  
Wensheng Zhang ◽  
Haizhou Hu ◽  
Bao Li ◽  
Youning Wang ◽  
...  
Keyword(s):  
Signaling Pathway ◽  
Growth Direction ◽  
Primary Roots

scholarly journals A nonparametric test on differences in growth direction of rice primary roots.

1990 ◽  
Vol 59 (3) ◽  
pp. 572-575 ◽  
Author(s):  
Jun ABE ◽  
Keisuke NEMOTO ◽  
Dong Xu HU ◽  
Shigenori MORlTA
Keyword(s):  
Nonparametric Test ◽  
Growth Direction ◽  
Primary Roots

scholarly journals Effect of shading on root system morphology and grain yield of rice plants (Oryza sativa L.). II. An analysis on primary roots.

1990 ◽  
Vol 59 (1) ◽  
pp. 95-99 ◽  
Author(s):  
Masahiro MAWAKI ◽  
Jiro HARADA ◽  
Tadatoshi IWATA ◽  
Koou YAMAZAKI
Keyword(s):  
Oryza Sativa ◽  
Grain Yield ◽  
Root System ◽  
Oryza Sativa L ◽  
Rice Plants ◽  
Primary Roots

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

The limits of strain and lattice parameter measurements by CBED

1989 ◽  
Vol 47 ◽  
pp. 518-519
Author(s):  
Hamish L. Fraser
Keyword(s):  
Electron Beam ◽  
Mirror Symmetry ◽  
Local Symmetry ◽  
Lattice Parameter ◽  
Growth Direction ◽  
Surface Relaxation ◽  
Strained Layer ◽  
Axis Parallel ◽  
Local Lattice ◽  
Strained Layer Superlattice

The topic of strain and lattice parameter measurements using CBED is discussed by reference to several examples. In this paper, only one of these examples is referenced because of the limitation of length. In this technique, scattering in the higher order Laue zones is used to determine local lattice parameters. Work (e.g. 1) has concentrated on a model strained-layer superlattice, namely Si/Gex-Si1-x. In bulk samples, the strain is expected to be tetragonal in nature with the unique axis parallel to [100], the growth direction. When CBED patterns are recorded from the alloy epi-layers, the symmetries exhibited by the patterns are not tetragonal, but are in fact distorted from this to lower symmetries. The spatial variation of the distortion close to a strained-layer interface has been assessed. This is most readily noted by consideration of Fig. 1(a-c), which show enlargements of CBED patterns for various locations and compositions of Ge. Thus, Fig. 1(a) was obtained with the electron beam positioned in the center of a 5Ge epilayer and the distortion is consistent with an orthorhombic distortion. When the beam is situated at about 150 nm from the interface, the same part of the CBED pattern is shown in Fig. 1(b); clearly, the symmetry exhibited by the mirror planes in Fig. 1 is broken. Finally, when the electron beam is positioned in the center of a 10Ge epilayer, the CBED pattern yields the result shown in Fig. 1(c). In this case, the break in the mirror symmetry is independent of distance form the heterointerface, as might be expected from the increase in the mismatch between 5 and 10%Ge, i.e. 0.2 to 0.4%, respectively. From computer simulation, Fig.2, the apparent monocline distortion corresponding to the 5Ge epilayer is quantified as a100 = 0.5443 nm, a010 = 0.5429 nm and a001 = 0.5440 nm (all ± 0.0001 nm), and α = β = 90°, γ = 89.96 ± 0.02°. These local symmetry changes are most likely due to surface relaxation phenomena.

Regulation of plastid photosynthetic psbK-I-D-C gene expression by light in rice plants

1995 ◽  
Vol 93 (4) ◽  
pp. 617-623 ◽  
Author(s):  
Shu-Chen Grace Chen ◽  
Sang-Pin Wu ◽  
Pang-Kuo Lo ◽  
Dir-Pu Mon ◽  
Long-Fang Oliver Chen
Keyword(s):  
Gene Expression ◽  
Rice Plants
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