An Optical Transimpedance Amplifier Using an Inductive Buffer Stage Technique

2009 ◽  
Vol E92-B (6) ◽  
pp. 2239-2242 ◽  
Author(s):  
Sang Hyun PARK ◽  
Quan LE ◽  
Bo-Hun CHOI
Keyword(s):  
Transimpedance Amplifier

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

scholarly journals A System in Package Based on a Piezoelectric Micromachined Ultrasonic Transducer Matrix for Ranging Applications

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2590
Author(s):  
Alexandre Robichaud ◽  
Dominic Deslandes ◽  
Paul-Vahé Cicek ◽  
Frederic Nabki
Keyword(s):  
High Voltage ◽  
Integrated Circuit ◽  
Ultrasonic Transducer ◽  
Ultrasonic Transducers ◽  
Transimpedance Amplifier ◽  
Measurement Results ◽  
Ultrasonic Ranging ◽  
High Voltage Pulser ◽  
Working Frequency ◽  
Simulation Results

This paper proposes a system in package (SiP) for ultrasonic ranging composed of a 4 × 8 matrix of piezoelectric micromachined ultrasonic transducers (PMUT) and an interface integrated circuit (IC). The PMUT matrix is fabricated using the PiezoMUMPS process and the IC is implemented in the AMS 0.35 µm technology. Simulation results for the PMUT are compared to the measurement results, and an equivalent circuit has been derived to allow a better approximation of the load of the PMUT on the IC. The control circuit is composed of a high-voltage pulser to drive the PMUT for transmission and of a transimpedance amplifier to amplify the received echo. The working frequency of the system is 1.5 MHz.

A CMOS Low-Noise and Low-Power Transimpedance Amplifier

2021 ◽  
Author(s):  
Mehrdad Amirkhan Dehkordi ◽  
Seyed Mehdi Mirsanei ◽  
Soorena Zohoori
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Transimpedance Amplifier

scholarly journals A Current-Mode TransImpedance Amplifier for Capacitive Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari
Keyword(s):  
Current Mode ◽  
Cmos Technology ◽  
Detection Sensitivity ◽  
Transimpedance Amplifier ◽  
Current Conveyors ◽  
Interface Circuit ◽  
Linear Behavior ◽  
Board Level ◽  
Voltage Conversion ◽  
A Current

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.

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