scholarly journals Near-threshold SIDO DC-DC converter with a high-precision ZCD for phase change memory chip

2019 ◽  
Vol 16 (11) ◽  
pp. 20190250-20190250
Author(s):  
Jie Miao ◽  
Houpeng Chen ◽  
Yu Lei ◽  
Yi Lv ◽  
Weili Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Precision ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Change Memory ◽  
Near Threshold

A 256-Mcell Phase-Change Memory Chip Operating at $2{+}$ Bit/Cell

2013 ◽  
Vol 60 (6) ◽  
pp. 1521-1533 ◽  
Author(s):  
Gael F. Close ◽  
Urs Frey ◽  
Jack Morrish ◽  
Richard Jordan ◽  
Scott C. Lewis ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Change Memory

Design of an Initialization Circuit Used in Phase Change Memory Chip

2014 ◽  
Vol 543-547 ◽  
pp. 471-474
Author(s):  
Qian Wang ◽  
Hou Peng Chen ◽  
Yi Yun Zhang ◽  
Xi Fan ◽  
Xi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Memory Chip ◽  
Grain Sizes ◽  
Reset Operation ◽  
Materials Used ◽  
Change Memory

Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

scholarly journals A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

2015 ◽  
Vol 7 (2) ◽  
pp. 172-176 ◽  
Author(s):  
Zhitang Song ◽  
YiPeng Zhan ◽  
Daolin Cai ◽  
Bo Liu ◽  
Yifeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Cmos Technology ◽  
Memory Chip ◽  
Change Memory

scholarly journals Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale ◽  
2021 ◽  
Author(s):  
Zhitang Song ◽  
Daolin Cai ◽  
Yan Cheng ◽  
Lei Wang ◽  
Shilong Lv ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Multi Level ◽  
Change Memory ◽  
Cell Storage

Correction for ‘12-state multi-level cell storage implemented in a 128 Mb phase change memory chip’ by Zhitang Song et al., Nanoscale, 2021, DOI: 10.1039/d1nr00100k.

scholarly journals Methods to speed up read operation in a 64 Mbit phase change memory chip

2015 ◽  
Vol 12 (20) ◽  
pp. 20150792-20150792 ◽  
Author(s):  
Qian Wang ◽  
Xi Li ◽  
Houpeng Chen ◽  
Yifeng Chen ◽  
Yueqing Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Read Operation ◽  
Speed Up ◽  
Change Memory

12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale ◽  
2021 ◽  
Author(s):  
Zhitang Song ◽  
Daolin Cai ◽  
Yan Cheng ◽  
Lei Wang ◽  
Shilong Lv ◽  
...  
Keyword(s):  
Artificial Intelligence ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Multi Level ◽  
Change Memory ◽  
Cell Storage

128 Mb Phase Change Memory (PCM) chips show potential for many applications in artificial intelligence.

A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip

2013 ◽  
Vol 81 ◽  
pp. 157-162 ◽  
Author(s):  
J.H. Wang ◽  
J. Zhou ◽  
W.L. Zhou ◽  
H. Tong ◽  
D.Q. Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Change Memory

16-Kbit SPI phase change memory chip with ECC scheme

2013 ◽  
Author(s):  
Yiyun Zhang ◽  
Houpeng Chen ◽  
Zhitang Song ◽  
Xi Li ◽  
Xiao Hong ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Chip ◽  
Change Memory
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