scholarly journals A 0.6 V temperature-stable CMOS voltage reference circuit with sub-threshold voltage compensation technique

2018 ◽  
Vol 15 (18) ◽  
pp. 20180760-20180760 ◽  
Author(s):  
Zhikuang Cai ◽  
Chao Chen
Keyword(s):  
Threshold Voltage ◽  
Voltage Reference ◽  
Voltage Compensation ◽  
Reference Circuit ◽  
Compensation Technique ◽  
Cmos Voltage Reference

scholarly journals Pico Watt sub-threshold CMOS voltage reference circuit

2013 ◽  
Vol 10 (4) ◽  
pp. 20120945-20120945 ◽  
Author(s):  
A. Sahafi ◽  
J. Sobhi ◽  
Z.D. Koozekanani
Keyword(s):  
Voltage Reference ◽  
Reference Circuit ◽  
Cmos Voltage Reference

scholarly journals A 3-Transistor Low Power Rectifier for Wideband RF Energy Harvesting with a Threshold Voltage Compensation Technique using 45 nm Technology

2020 ◽  
Vol 19 ◽  
Keyword(s):  
Energy Harvesting ◽  
Threshold Voltage ◽  
High Frequency ◽  
High Speed ◽  
Signal Power ◽  
Green Communication ◽  
Rf Energy Harvesting ◽  
Voltage Compensation ◽  
Compensation Technique ◽  
Rf Energy

With the advent of modern wireless communication technology and increasing requirement of high speed network, network life-time is becoming a major area of concern. The need of network power management is gaining attention with the high data network in place and is making a paradigm shift towards green communication. Hence embedding the RF energy harvesting (EH) capability in a wireless network is becoming inevitable. To make RF EH a reality a high frequency rectifier is indeed indispensable along with other circuits in the system. The RF energy needs to be harvested from the available sources in the ambience. It is also seen that the current generation of RF sources radiates at a very low signal power. So, to successfully convert and store this energy, the rectifier must not only be able to provide a sufficiently higher percentage conversion ratio (PCE) but also be able to cater it at a lower range of signal power. This paper presents the design and analysis of a simplified 3-transistor high frequency rectifier. A threshold voltage compensation technique is also incorporated and it achieves a PCE upto 85% at -2dBm in its single stage implementation. This is observed to be one of the highest in-class efficiency as compared to recently reported designs. From the frequency response it is seen to exhibit wide band performance spanning almost all popular wireless bands. The dynamic power dissipation (DPD) is calculated to be 6.25pW at -2dB, whereas the leakage power (LP) is observed to be zero.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

2016 ◽  
Vol 37 (5) ◽  
pp. 055005
Author(s):  
Xuemin Li ◽  
Mao Ye ◽  
Gongyuan Zhao ◽  
Yun Zhang ◽  
Yiqiang Zhao
Keyword(s):  
Voltage Reference ◽  
Compensation Technique ◽  
Cmos Voltage Reference

scholarly journals CMOS Voltage Reference Based on the Threshold Voltage of a MOSFET

2007 ◽  
Author(s):  
Ken Ueno ◽  
Tetsuya Hirose ◽  
Tetsuya Asai ◽  
Yoshihito Amemiya
Keyword(s):  
Threshold Voltage ◽  
Voltage Reference ◽  
Cmos Voltage Reference
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